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Micro-raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/sapphire (0001)

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Abstract

We have investigated the n-dopant distribution in the overgrown and window regions of lateral-epitaxial overgrown GaN/sapphire (0001) using room-temperature micro-Raman spectroscopy in the backscattering configuration. From a fit to the high energy-coupled longitudinal optical (LO) phonon-plasmon mode (LPP+), we have evaluated n ≈ (6.5±0.6) × 1017 cm−3 in the overgrown region; a value considerably higher than that previously reported by Pophristic et al.5 The spectrum from the window region was harder to interpret because of the considerable overlap of the A1(LO) mode and Eg (750 cm−1) sapphire line with the LPP+ trace. The implications of our findings for the overgrown region on the measured thermal conductivity as well as other parameters will be discussed.

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References

  1. For example, S. Nakamura, Science 281, 956 (1998).

    Article  CAS  Google Scholar 

  2. R.M. Hansen, P. Fini, L. Zhao, A.C. Abare, L.A. Coldren, J.S. Speck, and S.P. DenBaars, Appl. Phys. Lett. 76, 529 (2000).

    Article  CAS  Google Scholar 

  3. D.I. Florescu, V.M. Asnin, F.H. Pollak, A.M. Jones, J.C. Ramer, M.J. Schurman, and I. Ferguson, Appl. Phys. Lett. 77, 1464 (2000).

    Article  CAS  Google Scholar 

  4. D.I. Florescu, V.M. Asnin, and F.H. Pollak, Comp. Semicond. 7, 62 (2001).

    Google Scholar 

  5. M. Pophristic, F.H. Long, M. Schurman, J. Ramer, and I.T. Ferguson, Appl. Phys. Lett. 74, 3519 (1999).

    Article  CAS  Google Scholar 

  6. For example, F.H. Pollak, Analytical Raman Spectroscopy, ed. J.C. Grasselli and B.J. Bulkin (New York: Wiley, 1991), p. 137.

    Google Scholar 

  7. T. Kozawa, T. Kachi, H. Kano, Y. Tga, M. Hashimoto, N. Koide, and K. Manabe, J. Appl. Phys. 75, 1098 (1994).

    Article  CAS  Google Scholar 

  8. D.I. Florescu, V.M. Asnin, F.H. Pollak, R.J. Molnar, and C.E.C. Wood, J. Appl. Phys. 88, 3295 (2000).

    Article  CAS  Google Scholar 

  9. G. Popovici, H. Morkoç, and S.N. Mohammad, Group III Nitride Semiconductor Compounds, ed. B. Gil (Oxford: Clarendon, 1998), p. 19.

    Google Scholar 

  10. M. Suzuki and T. Uenoyama, Properties, Processing, and Applications of Gallium Nitride and Related Semiconductors, ed. J.H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (London: INSPEC, 1999), p. 175.

    Google Scholar 

  11. C. Wetzel and I. Akasaki, Properties, Processing, and Applications of Gallium Nitride and Related Semiconductors, ed. J.H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (London: INSPEC, 1999), p. 52.

    Google Scholar 

  12. H. Haruma, T. Inoue, S. Nakashino, K. Furukawa, and M. Tanaya, Appl. Phys. Lett. 73, 2000 (1998).

    Article  Google Scholar 

  13. For example, C.M. Bhandari and D.M. Rowe, Thermal Conduction in Semiconductors (New York: Wiley, 1988).

    Google Scholar 

  14. For example, S. Nakamura, Semiconductors and Semimetals, Vol. 48, ed. G.B. Stringfellow and M.G. Craford (New York: Academic Press, 1997), p. 391.

    Google Scholar 

  15. M. Kuball, M. Benyoucef, B. Beaumont, and P. Gibart, J. Appl. Phys. 90, 3656 (2001).

    Article  CAS  Google Scholar 

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Author notes

  1. I. Ferguson

    Present address: the School of Electrical and Computer Engineering, Georgia Institute of Technology, 30332-0250, Atlanta, GA

Authors and Affiliations

  1. Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College, City University of New York, 11210, Brooklyn, NY

    V. V. Chaldyshev & Fred H. Pollak

  2. the Graduate School and University Center, City University of New York, 10016, New York, NY

    Fred H. Pollak

  3. Emcore Corporation, 08873, Somerset, NJ

    M. Pophristic, S. P. Gou & I. Ferguson

Authors
  1. V. V. Chaldyshev
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  2. Fred H. Pollak
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  3. M. Pophristic
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  4. S. P. Gou
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  5. I. Ferguson
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Chaldyshev, V.V., Pollak, F.H., Pophristic, M. et al. Micro-raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/sapphire (0001). J. Electron. Mater. 31, 631–634 (2002). https://doi.org/10.1007/s11664-002-0134-3

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  • DOI: https://doi.org/10.1007/s11664-002-0134-3

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