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Electro-transport and structure of 1-2-3 HTSC single crystals with different plane defects topologies

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Abstract

In this work we study the structural and resistivity parameters of the 1-2-3 system HTSC single crystals by substituting yttrium to holmium and with a low (5%) aluminum doping. It was determined that in the case of non-stoichiometric samples, the structure of crystals, directly after the solution-melt growth, is close to tetragonal. In the process of additional oxygen saturation we observed a ferroelastic transition to orthorhombic phase, accompanied by the formation of a domain twin structure. The twin boundaries and the aluminum impurities are efficient scattering centers of normal carriers. At aluminum concentration y ≤ 0.5 the tweed structure is not formed.

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Authors and Affiliations

  1. Kharkov National University, 4 Svoboda Sq., 61077, Kharkov, Ukraine

    R. V. Vovk, M. A. Obolenskii, Z. F. Nazyrov & I. L. Goulatis

  2. Department of Materials, Imperial College, London, SW7 2AZ, United Kingdom

    A. Chroneos

  3. IPA_Instituto Superior Autónomo de Estudos Politécnicos, Rua de Xabregas, 20, 1º, 1900-440, Lisbon, Portugal

    V. M. Pinto Simoes

Authors
  1. R. V. Vovk
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  2. M. A. Obolenskii
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  3. Z. F. Nazyrov
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  4. I. L. Goulatis
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  5. A. Chroneos
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  6. V. M. Pinto Simoes
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Corresponding author

Correspondence to A. Chroneos.

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Vovk, R.V., Obolenskii, M.A., Nazyrov, Z.F. et al. Electro-transport and structure of 1-2-3 HTSC single crystals with different plane defects topologies. J Mater Sci: Mater Electron 23, 1255–1259 (2012). https://doi.org/10.1007/s10854-011-0582-8

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  • DOI: https://doi.org/10.1007/s10854-011-0582-8

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