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High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

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Abstract

We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.

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Authors and Affiliations

  1. School of Engineering, Physics and Mathematics, University of Dundee, Dundee, DD1 4HN, UK

    D. I. Nikitichev, Y. Ding, M. A. Cataluna & E. U. Rafailov

  2. Alcatel Thales III-V Lab, 1 Av Augustin Fresnel, Campus de Polytechnique, 91767, Palaiseau, France

    M. Ruiz, M. Calligaro, N. Michel & M. Krakowski

  3. Innolume GmbH, Konrad-Adenauer-Allee 11, 44263, Dortmund, Germany

    I. Krestnikov & D. Livshits

Authors
  1. D. I. Nikitichev
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  2. Y. Ding
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  3. M. Ruiz
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  4. M. Calligaro
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  5. N. Michel
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  6. M. Krakowski
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  7. I. Krestnikov
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  8. D. Livshits
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  9. M. A. Cataluna
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  10. E. U. Rafailov
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Correspondence to D. I. Nikitichev.

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Nikitichev, D.I., Ding, Y., Ruiz, M. et al. High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers. Appl. Phys. B 103, 609–613 (2011). https://doi.org/10.1007/s00340-010-4290-5

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  • DOI: https://doi.org/10.1007/s00340-010-4290-5

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