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Power scale-up of the diode-pumped actively Q-switched Nd:YVO4 Raman laser with an undoped YVO4 crystal as a Raman shifter

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Abstract

With an undoped YVO4 crystal as a Raman shifter, we substantially improved the reliability and the output performance of an actively Q-switched 1176-nm Nd:YVO4 Raman laser. With an incident pump power of 18.7 W, the average power is greater than 2.6 W at 80 kHz. The pulse width of the pulse envelope is shorter then 5 ns with mode-locked modulation. With an incident pump power of 12.7 W, the pulse energy and peak power is higher than 43 μJ and 14 kW at 40 kHz.

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Authors and Affiliations

  1. Department of Electrophysics, National Chiao Tung University, F353, Engineering Building VI, No 1001, Ta Hsueh Rd, Hsinchu, 300, Taiwan

    K.W. Su, Y.T. Chang & Y.F. Chen

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  1. K.W. Su
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  2. Y.T. Chang
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Correspondence to K.W. Su.

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PACS

42.55.Ye; 42.55.Xi; 42.60.Gd

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Su, K., Chang, Y. & Chen, Y. Power scale-up of the diode-pumped actively Q-switched Nd:YVO4 Raman laser with an undoped YVO4 crystal as a Raman shifter. Appl. Phys. B 88, 47–50 (2007). https://doi.org/10.1007/s00340-007-2648-0

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  • DOI: https://doi.org/10.1007/s00340-007-2648-0

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