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Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

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Abstract

This work reports single-frequency laser oscillation at λ=1003.4 nm of a diode-pumped vertical external cavity surface-emitting semiconductor laser for metrological applications. A low thermal resistance of the semiconductor active component is achieved by solid-liquid interdiffusion bonding onto a SiC substrate. The spectro-temporal dynamics of the laser is theoretically studied. Experimentally, an output power of 1.7 W is demonstrated in free running operation, and up to 500 mW in a true single longitudinal mode. Furthermore, single-frequency laser emission at λ=501.7 nm is obtained by intracavity frequency doubling, resulting in a total output power as high as 62 mW.

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Authors and Affiliations

  1. Laboratoire Charles Fabry de l’Institut d’Optique, CNRS, Univ. Paris-Sud, Campus Polytechnique RD 128, 91127, Palaiseau Cedex, France

    M. Jacquemet, M. Domenech, G. Lucas-Leclin & P. Georges

  2. Laboratoire de Photonique et de Nanostructures, Route de Nozay CNRS UPR 20, 91460, Marcoussis, France

    J. Dion, M. Strassner & I. Sagnes

  3. Centre d’Electronique et de Micro-optoélectronique de Montpellier, CNRS UMR5507, 34095, Universite Montpellier 2, Montpellier Cedex 5, France

    A. Garnache

Authors
  1. M. Jacquemet
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  2. M. Domenech
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  3. G. Lucas-Leclin
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  4. P. Georges
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  5. J. Dion
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  6. M. Strassner
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  7. I. Sagnes
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  8. A. Garnache
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Corresponding author

Correspondence to G. Lucas-Leclin.

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PACS

42.55.Px; 42.55.Xi; 42.62.Eh; 42.65.Ky

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Jacquemet, M., Domenech, M., Lucas-Leclin, G. et al. Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling. Appl. Phys. B 86, 503–510 (2007). https://doi.org/10.1007/s00340-006-2499-0

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  • DOI: https://doi.org/10.1007/s00340-006-2499-0

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