Abstract
Femtosecond laser (Ti:sapphire, 100 fs pulse duration) ablation of silicon in air was compared with nanosecond laser (Nd:YAG, 3 ns pulse duration) ablation at ultraviolet wavelength (266 nm). Laser ablation efficiency was studied by measuring crater depth as a function of pulse number. For the same number of laser pulses, the fs-ablated crater was about two times deeper than the ns-crater. The temperature and electron number density of the laser-induced plasma were determined from spectroscopic measurements. The electron number density and temperature of fs-induced plasmas decreased faster than ns-induced plasmas due to different energy deposition mechanisms. Images of the laser-induced plasma were obtained with femtosecond time-resolved laser shadowgraph imaging. Plasma expansion in both the perpendicular and the lateral directions were compared.
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52.38.Mf; 52.30.-q
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Zeng, X., Mao, X., Greif, R. et al. Experimental investigation of ablation efficiency and plasma expansion during femtosecond and nanosecond laser ablation of silicon. Appl. Phys. A 80, 237–241 (2005). https://doi.org/10.1007/s00339-004-2963-9
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DOI: https://doi.org/10.1007/s00339-004-2963-9