Abstract
A short review on the theoretical description of nonlinear optical phenomena which are caused by an electric polarization cubic in the electric field amplitudes is given. Then the microscopic theories for the calculation of the nonlinear susceptibility, especially in semiconductors, are briefly reported. After a short section on the bandstructure of IV–VI compounds in a magnetic field, the lineshapes of the coherent anti-Stokes radiation as a function of the magnetic field are discussed in detail.
In the experimental part measurements of coherent anti-Stokes Raman scattering (CARS) in PbTe and PbSe epitaxial films are reported. We observed pure as well as combined spin flip transitions. These data and the results of additionally observed interbandtransitions were used in least squares fits and consistent sets of bandparameters of PbTe and PbSe were obtained.
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Abbreviations
- E :
-
electric field vector
- P :
-
electric polarization
- ɛ0 :
-
electric permeability of vacuum: 8.854×10−12 F/m
- ϰ n :
-
susceptibility tensor of rankn+1
- ɛГ :
-
dielectric constant
- σ:
-
conductivity tensor
- μ0 :
-
magnetic permeability of vacuum: 4×107 H/m
- i :
-
i 2=−1
- ω:
-
angular frequency
- k :
-
wave vector
- t :
-
time
- I :
-
imensity
- g s :
-
Raman gain
- α:
-
absorption constant
- E g :
-
energy gap
- e :
-
electron electric charge
- m * :
-
effective mass
- E f :
-
Fermi energy
- N :
-
carrier density
- г:
-
linewidth
- ħ:
-
Planck's constant/2π
- B :
-
magnetic displacement vector
- n :
-
Landau quantum number
- s :
-
spin quantum number
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