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Measuring the Interatomic Distance in a Silicon Crystal Lattice Using an Optical Scanning Interferometer

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Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

We study the influence of the characteristics of the optical system of an interferometer on the distribution of spectral power density of partially coherent light passing through the system. The results of measurements of the effective wavelength for a partially coherent light source installed in the interferometer are presented. It has been shown that the optical system of the interferometer distorts the light source spectrum, which leads to a systematic error in measurements. The use of atomically smooth surfaces as mirrors in reference and measuring arms of the interferometer made it possible to study the influence of the optical system of the interferometer on phase distortions. It has been found that optical system distortions lead to a systematic error in the topography measurement of more than 5 nm in height. The use of an atomically smooth surface as a reference measurement object makes it possible to significantly reduce this error (to 0.12 nm). The results of measurements of the echelon of atomic steps with a countable number of monatomic layers on the silicon crystal surface are presented. For the first time, experimental methods of low-coherence optical interferometry were used to measure the average value of the interatomic (interplanar) distance in a [111] orientation Si crystal lattice, which was \(3.145\pm 0.003\) Å.

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REFERENCES

  1. G. V. Rozenberg, ‘‘Interference microscopy,’’ Usp. Fiz. Nauk 50, 271–302 (1953). https://doi.org/10.3367/UFNr.0050.195306d.0271

    Article  Google Scholar 

  2. E. V. Sysoev, ‘‘White-light interferometer with partial correlogram scanning,’’ Optoelectron., Instrum. Data Process. 43, 83–89 (2017). https://doi.org/10.3103/S8756699007010128

    Article  Google Scholar 

  3. T.-H. Chao, T. T. Lu, S. R. Davis, S. D. Rommel, G. Farca, B. Luey, A. Martin, and M. H. Anderson, ‘‘Compact liquid crystal waveguide based Fourier transform spectrometer for in-situ and remote gas and chemical sensing,’’ Proc. SPIE 6977, 69770P (2008). https://doi.org/10.1117/12.785888

    Article  Google Scholar 

  4. A. N. Zakhar’evskii, V. A. Panov, and A. F. Kuznetsova, ‘‘Interference microobjective lens,’’ OMP, No. 6, 34–37 (1960).

    Google Scholar 

  5. S. L. Konsek, R. J. N. Coope, T. P. Pearsall, and T. Tiedje, ‘‘Selective surface modifications with a scanning tunneling microscope,’’ Appl. Phys. Lett. 70, 1846 (1997). https://doi.org/10.1063/1.118709

    Article  ADS  Google Scholar 

  6. E. Sysoev, S. Kosolobov, R. Kulikov, A. Latyshev, S. Sitnikov, and I. Vykhristyuk, ‘‘Interferometric surface relief measurements with subnano/picometer height resolution,’’ Meas. Sci. Rev. 17, 213–218 (2017). https://doi.org/10.1515/msr-2017-0025

    Article  Google Scholar 

  7. S. V. Sitnikov, S. S. Kosolobov, and A. V. Latyshev, RF Patent No. 2453874, Byull. Izobret., No. 17 (2012).

  8. S. V. Sitnikov, A. V. Latyshev, and S. S. Kosolobov, ‘‘Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface,’’ J. Cryst. Growth 457, 196–201 (2017). https://doi.org/10.1016/j.jcrysgro.2016.05.048

    Article  ADS  Google Scholar 

  9. Y. Homma, N. Aizawa, and T. Ogino, ‘‘Ultra-large-scale step-free terraces formed at the bottom of craters on vicinal Si(111) surfaces,’’ Jpn. J. Appl. Phys. 35, L241–L243 (1996). https://doi.org/10.1143/JJAP.35.L241

    Article  ADS  Google Scholar 

  10. MI 2083–90 GSI: Indirect Measurements: Determination of Measurement Results and Estimation of Their Errors (Izd-vo Standartov, Moscow, 1991).

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Authors and Affiliations

  1. Technological Design Institute of Scientific Instrument Engineering, Siberian Branch, Russian Academy of Sciences, 630058, Novosibirsk, Russia

    E. V. Sysoev

  2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    A. V. Latyshev

Authors
  1. E. V. Sysoev
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  2. A. V. Latyshev
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Correspondence to E. V. Sysoev or A. V. Latyshev.

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The authors declare that they have no conflicts of interest.

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Translated by V. Arutyunyan

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Sysoev, E.V., Latyshev, A.V. Measuring the Interatomic Distance in a Silicon Crystal Lattice Using an Optical Scanning Interferometer. Optoelectron.Instrument.Proc. 57, 561–568 (2021). https://doi.org/10.3103/S8756699021060157

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  • DOI: https://doi.org/10.3103/S8756699021060157

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