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Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al\({}_{\mathbf{2}}\)O\({}_{\mathbf{3}}\) Grown by Atomic Layer Deposition

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Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

The effect of the different surface treatment of Hg\({}_{1-x}\)Cd\({}_{x}\)Te (CMT) films before the atomic layer deposition of Al\({}_{2}\)O\({}_{3}\) dielectric on the charge at the dielectric–semiconductor interface has been studied. Metal–dielectric–semiconductor (MDS) structures with different surface treatment before the deposition of a dielectric have been manufactured. The capacitance–voltage characteristics of CMT based MDS structures have been measured alongside with the surface charge density. The surface charge is non-uniformly distributed over the surface of films with \(x=0.22\) and a natural oxide layer and equal to \((0.8{-}1.8)\times 10^{-8}\) C/cm\({}^{2}\), and this may lead to the inversion of the surface conductivity type. The exposure of these CMT structures in mercury vapor at room temperature leads to the formation of a negative charge within a range of \(-(0.4{-}1.6)\times 10^{-8}\) C/cm\({}^{2}\).

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Funding

This study was supported by the Russian Science Foundation (grant no. 18-72-00038).

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    G. Yu. Sidorov, D. V. Gorshkov, Yu. G. Sidorov, I. V. Sabinina & V. S. Varavin

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  1. G. Yu. Sidorov
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  2. D. V. Gorshkov
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  3. Yu. G. Sidorov
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  4. I. V. Sabinina
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  5. V. S. Varavin
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Correspondence to G. Yu. Sidorov.

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Translated by E. Glushachenkova

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Sidorov, G.Y., Gorshkov, D.V., Sidorov, Y.G. et al. Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al\({}_{\mathbf{2}}\)O\({}_{\mathbf{3}}\) Grown by Atomic Layer Deposition. Optoelectron.Instrument.Proc. 56, 492–497 (2020). https://doi.org/10.3103/S875669902005012X

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