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Investigation of the temperature coefficient of the forbidden band energy of CdSe1−xSx semiconductor nanostructures

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

The dependence of the semiconductor forbidden band energy temperature coefficient on the sizes of CdSe1−xSx nanocrystals embedded in a silicate glass is investigated experimentally and theoretically. It is revealed that the temperature coefficient dependence on the sizes of nanocrystals has a maximum. This behavior is explained by the reduction of nanocrystalline inclusion sizes at heating, which occurs in view of the more strong expansion of the matrix.

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Authors and Affiliations

  1. Yerevan State University, Russia

    D. M. Sedrakian, P. G. Petrosyan, L. N. Grigoryan & V. D. Badalyan

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  1. D. M. Sedrakian
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  2. P. G. Petrosyan
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  3. L. N. Grigoryan
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  4. V. D. Badalyan
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Additional information

Original Russian Text © D.M. Sedrakian, P.G. Petrosyan, L.N. Grigoryan, V.D. Badalyan, 2007, published in Izvestiya NAN Armenii, Fizika, 2007, Vol. 42, No. 1, pp. 9–16.

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Sedrakian, D.M., Petrosyan, P.G., Grigoryan, L.N. et al. Investigation of the temperature coefficient of the forbidden band energy of CdSe1−xSx semiconductor nanostructures. J. Contemp. Phys. 42, 5–10 (2007). https://doi.org/10.3103/S1068337207010021

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  • DOI: https://doi.org/10.3103/S1068337207010021

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