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Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells

  • SOLAR MATERIALS SCIENCE
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Abstract

A technology has been developed for manufacturing solar cells based on silicon doped with impurity atoms of rare-earth elements holmium and gadolinium. It has been established that at a concentration of doping with holmium and gadolinium of 1017 cm–3, the efficiency of solar cells increases on average by 15% relative to the control ones. An increase in the radiation resistance of solar cells based on silicon doped with rare earth elements holmium and gadolinium during irradiation with gamma quanta is shown. Rare-earth elements holmium and gadolinium, introduced into silicon during growth, are present in it in the form of various impurity precipitations and complexes, being electrically inactive, actively interacting with vacancies and residual impurities, reduce the concentration of optically active oxygen and carbon, increasing the thermal and radiation stability of the parameters of the original silicon.

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REFERENCES

  1. Papadopoulos, C., Silicon planar processing and photolithography, in Nanofabrication, Cham: Springer, 2016, pp. 7–14. https://doi.org/10.1007/978-3-319-31742-7_2

    Book  Google Scholar 

  2. Utamuradova, S., Muzafarova, S., Abdugafurov, A., Fayzullaev, K., Naurzalieva, E., and Rakhmanov, D., Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films, Appl. Phys., 2021, no. 4, pp. 81–86. https://doi.org/10.51368/1996-0948-2021-4-81-86

  3. Komilov, A., Gallium content-dependent efficiency limits of CIGS solar cells at AM1.5G solar irradiance, J. Photonics Energy, 2021, vol. 11, no. 3, p. 035501. https://doi.org/10.1117/1.JPE.11.035501

    Article  Google Scholar 

  4. Komilov, A., Study of the possibility of use of α-Si:H solar elements in photovoltaic thermal converters, Appl. Sol. Energy, 2015, vol. 51, no. 2, pp. 140–143. https://doi.org/10.3103/S0003701X15020048

    Article  Google Scholar 

  5. Utamuradova, S. and Muzafarova, S., Serial resistance of photoconverters SnO2/pCdTe, ITO/pCdTe and In2O3/pCdTe based on cadmium telluride, Eurasian Union Scientists, 2022, pp. 61–66. https://doi.org/10.31618/ESU.2413-9335.2021.1.93.1550

    Book  Google Scholar 

  6. Fayaz Wani, A., Rani, B., Dhiman, S., Sharopov, U.B., and Kaur, K., SiH monolayer: A promising two-dimensional thermoelectric material, Int. J. Energy Res., 2022, vol. 46, no. 8, 10885–10893. https://doi.org/10.1002/er.7889

    Article  Google Scholar 

  7. Sharopov, U.B., Kaur, K., Kurbanov, M.K., Saidov, D.S., Juraev, E.T., and Sharipov, M.M., Controlling the low-temperature ionic purification of a silicon surface by electron spectroscopy, Silicon, 2022, vol. 14, pp. 4661–4667. https://doi.org/10.1007/s12633-021-01268-0

    Article  Google Scholar 

  8. Utamuradova, S.B., Daliev, K.S., Kalandarov, E.K., and Daliev, S.K., Features of the behavior of lanthanum and hafnium atoms in silicon, Tech. Phys. Lett., 2006, vol. 32, no. 6, pp. 469–470. https://doi.org/10.1134/S1063785006060034

    Article  Google Scholar 

  9. Bakhadyrkhanov, M.K., Isamov, S.B., Zikrillaev, N.F., and Tachilin, S.A., Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms, Appl. Sol. Energy, 2012, vol. 48, no. 1, pp. 55–57. https://doi.org/10.3103/S0003701X12010057

    Article  Google Scholar 

  10. Komilov, A., Questions of simplifying the methods of testing photoconverters based on Cu(In,Ga)Se2. Part 1: A basis for mathematical modeling of the current–voltage characteristics, Appl. Sol. Energy, 2018, vol. 54, no. 1, pp. 1–3. https://doi.org/10.3103/S0003701X18010073

    Article  Google Scholar 

  11. Sharopov, U., Gopparov, U., Rashidov, K., Kaur, K., Kurbanov, M., Juraev, T., Egamberdiev, B., Kakhramonov, A., Turopova, S., Saidov, D., et al., Formation of defects on the surface of LiF crystals under irradiation with different ion mass, Radiat. Eff. Defects Solids, 2022, pp. 1–14. https://doi.org/10.1080/10420150.2022.2133716

  12. Sharopov, U., Kaur, K., Kurbanov, M., Avezov, N., Juraev, T., Egamberdiev, B., Rashidov, K., and Turapova, D., Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films, Surf. Interface Anal., 2022, vol. 54, no. 10, pp. 1052–1059. https://doi.org/10.1002/sia.7130

    Article  Google Scholar 

  13. Egamberdiyev, B.E., Tachilin, S.A., Toshev, A.R., Isroilov, F.M., and Dehkanov, M.Sh., Study of formation of clusters of atoms of gadolinium in silicon, J. Crit. Rev., 2020, vol. 7, no. 3, pp. 297–301.

    Google Scholar 

  14. Bakhadyrkhanov, M.K., Iliev, K.M., Mavlonov, G.K., Isamov, S.B., and Tachilin, S.A., Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material, Tech. Phys., 2019, vol. 64, no. 3, pp. 385–388.

    Article  Google Scholar 

  15. Bakhadyrkhanov, M.K., Valiev, S.A., Zikrillaev, N.F., Saitov, E.B., and Tachilin, S.A., Silicon photovoltaic cells with clusters of nickel atoms, Appl. Sol. Energy, 2016, vol. 52, no. 4, pp. 278–281.

    Article  Google Scholar 

  16. Bakhadyrkhanov, M.K., Isamov, S.B., Iliev, K.M., Tachilin, S.A., and Kamalov, K.U., Silicon-based photocells of enhanced spectral sensitivity with nano-sized graded band gap structures, Appl. Sol. Energy, 2014, vol. 50, no. 2, pp. 61–63.

    Article  Google Scholar 

  17. Bakhadyrkhanov, M.K., Isamov, S.B., Zikrillaev, N.F., and Tachilin, S.A., Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms, Appl. Sol. Energy, 2012, vol. 48, no. 1, pp. 55–57.

    Article  Google Scholar 

  18. Abdurakhmanov, B.A., Iliev, Kh.M., Tachilin, S.A., and Toshev, A.R., Silicon solar cells with Si-Ge microheterojunctions, Russ. Microelectron., 2012, vol. 41, no. 3, pp. 169–171.

    Article  Google Scholar 

  19. Bakhadyrkhanov, M.K., Mavlonov, G.Kh., Isamov, S.B., Saparniyazova, Z.M., and Tachilin, S.A., Transport properties of silicon doped with manganese via low-temperature diffusion, Inorg. Mater., 2011, vol. 47, no. 5, pp. 479–483.

    Article  Google Scholar 

  20. Egamberdiev, B.E., Rustamov, N.T., Mallaev, A.S., and Norov, A.M., Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions, J. Surf. Invest., 2015, vol. 9, no. 3, pp. 612–615.

    Article  Google Scholar 

  21. Egamberdiev, B.E., Holliev, B.Ch., and Mallaev, A.S., Investigation of the electro-physical properties and profiles of distribution of the ion-implanted Mn in silicon, Elektron. Obrab. Mater., 2005, no. 3, pp. 84–86.

  22. Egamberdiev, B.E. and Akbarov, A.A., Study of the distribution profile for nickel implanted in silicon and the effect of annealing on the structure, J. Surf. Invest., 2021, vol. 15, no. 3, pp. 611–614.

    Article  Google Scholar 

  23. Qurbonova, U.H., Rakhmonov, B.R., and Akramova, F.M., Original educational devices and benches on basis of solar elements, 2016 International Conference on Information Science and Communications Technologies, ICISCT 2016, 2016, p. 7777388.

  24. Bakhadyrkhanov, M.K., Kurbanova, U.Kh., and Zikrillaev, N.F., Correlation between the material parameters and conditions for the excitation of recombination waves in Si(S), Semiconductors, 1999, vol. 33, no. 1, pp. 20–21.

    Article  Google Scholar 

  25. Barybin, A.A., Tomilin, V.I., and Shapovalov, V.I., Fiziko-tekhnologicheskie osnovy makro-, mikro-, nanoelektroniki (Physical and Technological Foundations of Macro-, Micro-, Nanoelectronics), Moscow: Fizmatlit, 2010.

  26. Kozhitov, L.V., Timoshina, M.I., Pil’don, V.I., and Shepel’, P.N., Influence of impurities on the radiation resistance of silicon, Tezisy dokladov Tret’ei Rossiiskoi konferentsii “Kremnii-2003” (Proc. Third Russian Conference “Kremnii-2003”), 2003.

  27. Nikolaeva, E.P. and Kosheleva, N.N., Tochechnye defekty v kristallakh. Uchebnoe posobie (Point Defects in Crystals. Handbook), Voronezh, 2016.

    Google Scholar 

  28. Tolipov, F., Extended Abstract of Doctoral (Phys.–Math.) Dissertation, Tashkent, 1994.

  29. Toshev, A.R., Tachilin, S.A., and Iliev, Kh.M., Radiation stability of silicon solar cells doped with holmium, Dokl. Akad. Nauk, 2009, no. 5, pp. 39–41.

  30. Malkovich, R.Sh. and Nazyrov, D.E., Gettering of fast diffusing impurities in silicon by rare earth elements, Pis’ma Zh. Tekh. Fiz., 1989, vol. 15, no. 4, pp. 38–40.

    Google Scholar 

  31. Egamberdiev, B.E. and Toshev, A.R., Stability of silicon-based solar cell parameters implanted with rare earth elements, 2017.

  32. Egamberdiev, B.E., Rahmonov, A.T., and Toshev, A.R., Radiation stability of silicon-based solar cell parameters implanted with rare earth elements, Int. Conf., London, 2015, pp. 23–27.

  33. Bakhadyrkhanov, M.K., Iliev, Kh.M., Toshev, A.R., and Saidov, M.S., Effect of isovalent impurities on the parameters of silicon solar cells, Geliotekhnika, 2001, no. 4, pp. 13–18.

  34. Toshev, A.R., Egamberdiev, B.E., Abdurakhmonov, B.A., and Sattarov, O.E., Solar cells with Si/SiGe/Si microheterojunctions. Nanostructured semiconductor materials in photovoltaics, II Mezhdunarodnaya nauchnaya konferentsiya (II International Scientific Conference), Tashkent, November 19–20, 2021.

  35. Togatov, V.V. and Gnatyuk, P.A., A method for measuring the lifetime of charge carriers in the basic regions of high-speed diode structures, Fiz. Tekh. Poluprovod., 2005, vol. 39, no. 3., pp. 378–381. https://doi.org/10.21883/FTP.2022.01.51823.9642

    Article  Google Scholar 

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ACKNOWLEDGMENTS

The study was carried out in the laboratory Physics of Condensed Matter of the Research Institute of Physics of Semiconductors and Microelectronics, National University of Uzbekistan.

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Authors and Affiliations

  1. Research Institute of Physics of Semiconductors and Microelectronics, Tashkent, Uzbekistan

    B. E. Egamberdiev & Sh. B. Utamurodova

  2. Tashkent State Technical University, 100091, Tashkent, Uzbekistan

    S. A. Tachilin

  3. Physical–Technical Institute, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan

    M. A. Karimov, K. Yu. Rashidov & A. R. Kakhramonov

  4. Urgench State University, 220100, Urgench, Uzbekistan

    M. K. Kurbanov

  5. Tashkent University of Information Technologies, Urgench Branch, 220100, Urgench, Uzbekistan

    D. Sh. Saidov

  6. Institute of Materials Science, Uzbekistan Academy of Sciences, 100084, Tashkent, Uzbekistan

    S. U. Turopova

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  1. B. E. Egamberdiev
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  2. Sh. B. Utamurodova
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Correspondence to B. E. Egamberdiev.

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Egamberdiev, B.E., Utamurodova, S.B., Tachilin, S.A. et al. Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells. Appl. Sol. Energy 58, 490–496 (2022). https://doi.org/10.3103/S0003701X22040065

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