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Memristive Effect in Nitrogen-Doped Carbon Nanotubes

  • NANOSTRUCTURES, NANOTUBES
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Abstract

The development of nonvolatile memory is one of the urgent problems of contemporary science due to the rapid evolution of portable electronics. A promising trend in this field is the development of memristor structures able to change their resistance depending on the charge current through a memristor. The memristive effect in nitrogen-doped carbon nanotubes (CNT) is studied. It is established that the ratio between the resistances in high- and low-resistance states grows with an increase in the defectiveness of the carbon nanotubes to attain 4 × 105. It is shown that multilevel switching of the resistance determined by the recording voltage or deformation of a nanotube is possible in carbon nanotubes. The obtained results can be used for developing nonvolatile memory on the basis of CNTs corresponding to the condition of high scalability and multilevel switching.

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Funding

This study was financially supported by the ministry of Science and Higher Education of the Russian Federation within state task no. 0852-2020-0015 in the field of scientific activity.

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Authors and Affiliations

  1. Institute of Nanotechnologies, Electronics, and Equipment Engineering, Southern Federal University, 347922, Taganrog, Russia

    M. V. Il’ina & O. A. Ageev

  2. Research Laboratory of Functional Nanomaterials Technology, Southern Federal University, 347922, Taganrog, Russia

    O. I. Il’in, O. I. Osotova & S. A. Khubezhov

  3. ITMO University, 197101, St. Petersburg, Russia

    S. A. Khubezhov

  4. Research and Educational Canter “Nanotechnologies”, Southern Federal University, 347922, Taganrog, Russia

    O. A. Ageev

Authors
  1. M. V. Il’ina
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  2. O. I. Il’in
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  3. O. I. Osotova
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  4. S. A. Khubezhov
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  5. O. A. Ageev
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Correspondence to M. V. Il’ina.

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Translated by E. Glushachenkova

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Il’ina, M.V., Il’in, O.I., Osotova, O.I. et al. Memristive Effect in Nitrogen-Doped Carbon Nanotubes. Nanotechnol Russia 16, 821–828 (2021). https://doi.org/10.1134/S2635167621060082

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  • DOI: https://doi.org/10.1134/S2635167621060082

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