Skip to main content
Log in

Radiation Resistance of SiC Detectors after Neutron Irradiation

  • METHODS OF PHYSICAL EXPERIMENT
  • Published:
Physics of Particles and Nuclei Letters Aims and scope Submit manuscript

Abstract

The characteristics of detectors based on silicon carbide (SiC) before and after irradiation with integral neutron fluxes of 5.11 × 1013 and 5.39 × 1014 n/cm2 are presented. On the samples irradiated with the maximum fluence, using alpha particles, a deterioration in the energy resolution by an order of magnitude and a decrease in the efficiency of charge collection by ∼25% are shown.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.

Similar content being viewed by others

REFERENCES

  1. S. E. Saddow and A. Agarwal, Advances in Silicon Carbide Processing and Applications (Artech House, Boston, 2004).

    Google Scholar 

  2. E. V. Kalinina, “The effect of irradiation on the properties of SiC and devices based on this compound,” Semiconductors 41, 745 (2007).

    Article  ADS  Google Scholar 

  3. L. Hrubčín, Yu. B. Gurov, B. Zatko, S. V. Mitrofanov, S. V. Rozov, K. Sedlačková, V. G. Sandukovsky, V. A. Semin, V. Nečasd, and V. A. Skuratov, “Characteristics of Si and SiC detectors at registration of Xe ions,” J. Instrum. 13, P11005 (2018).

    Article  Google Scholar 

  4. Yu. B. Gurov, S. V. Rozov, V. G. Sandukovsky, E. A. Yakushev, L. Hrubcin, and B. Zat’ko, “Characteristics of silicon carbide detectors,” Instrum. Exp. Tech. 58, 22 (2015).

    Article  Google Scholar 

  5. M. V. Bulavin, A. E. Verkhoglyadov, S. A. Kulikov, E. N. Kulagin, V. V. Kukhtin, A. P. Cheplakov, and E. P. Shabalin, “Irradiation facility at the IBR-2 reactor for investigating material radiation hardness,” Phys. Part. Nucl. Lett. 12, 344–348 (2015).

    Article  Google Scholar 

  6. N. I. Zamyatin, A. E. Cheremukhin, and A. I. Shafronovskaya, “Measuring fluence of fast neutrons with planar silicon detectors,” Phys. Part. Nucl. Lett. 14, 762–777 (2017).

    Article  Google Scholar 

  7. M. Bruzzi, H. F. Sadrozinski, and A. Seiden, “Comparing radiation tolerant materials and devices for ultra rad-hard tracking detectors,” Nucl. Instrum. Methods Phys. Res., Sect. A 579, 754–761 (2007).

    Google Scholar 

  8. T. Angelescu, A. E. Cheremukhin, V. M. Ghete, N. Ghiordanescu, I. A. Golutvin, S. Lazanu, I. Lazanu, A. Mihul, A. Radu, N. Yu. Susova, A. Vasilescu, and N. I. Zamyatin, “Radiation hardness studies on silicon detectors in fast neutron fields,” Nucl. Instrum. Methods Phys. Res., Sect. A 357, 55–63 (1995).

    Google Scholar 

  9. L. Liu, A. Liu, S. Bai, L. Lv, P. Jin, and X. Ouyang, “Radiation resistance of silicon carbide Schottky diode detectors in D–T fusion neutron detection,” Sci. Rep. 7, 13376 (2017).

    Article  ADS  Google Scholar 

Download references

Funding

This work was supported by the Ministry of Science and Higher Education of the Russian Federation (grant no. 0723-2020-0041), Slovak Scientific Grant Agency (contract no. 2/0084/20), and Slovak Research and Development Agency (grant no. APVV-18-0243).

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to S. A. Evseev.

Additional information

Translated by E. Smirnova

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Gurov, Y.B., Evseev, S.A., Zamyatin, N.I. et al. Radiation Resistance of SiC Detectors after Neutron Irradiation. Phys. Part. Nuclei Lett. 19, 740–743 (2022). https://doi.org/10.1134/S1547477122060115

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1547477122060115

Navigation