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Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers

  • Articles from the Russian Journal Prikladnaya Fizika
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Abstract

The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.

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Authors and Affiliations

  1. Orion Research and Production Association, Moscow, 111538, Russia

    A. V. Nikonov & N. I. Iakovleva

  2. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow oblast, 141700, Russia

    A. V. Nikonov

Authors
  1. A. V. Nikonov
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  2. N. I. Iakovleva
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Correspondence to A. V. Nikonov.

Additional information

Original Russian Text © A.V. Nikonov, N.I. Iakovleva, 2016, published in Prikladnaya Fizika, 2016, No. 4, pp. 73–76.

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Nikonov, A.V., Iakovleva, N.I. Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers. J. Commun. Technol. Electron. 63, 277–280 (2018). https://doi.org/10.1134/S1064226918030142

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  • DOI: https://doi.org/10.1134/S1064226918030142

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