Abstract
Mesaelements of the focal plane array (FPA) of p–i–n diodes based on Al x Ga1–x N for p–i–n heteroepitaxial structures (HESs) grown by the molecular-beam epitaxy and hydride epitaxy methods with the use of metalorganic compounds are formed. Elements of 320 × 256 FPAs with a pitch of 30 μm are separated by means of ion-beam etching through a photoresist mask in the argon ion stream produced by the Kaufmann ion source in a vacuum plant. To determine the required etching depth, contact profilometry and ultraviolet spectrophotometry methods allowing one to determine positions of the n-layer and sufficient etching depth of the sample are used. The thickness accuracy of the HES functional layers stated in manufacturer’s certificates does not exceed 28%. Rates of ion-beam etching of Al x Ga1–x N for p–i–n layers with different compositions are determined.
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References
A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Solid-State Photoelectronics (Fizmatkniga, Moscow, 2011) [in Russian].
K. O. Boltar, I. V. Chinareva, and M. V. Sednev, Usp. Prikl. Fiz. 1, 488 (2013).
K. O. Boltar, I. D. Burlakov, A. M. Filachev, et al., Prikl. Fiz., No. 6, 54 (2013).
K. O. Boltar, I. D. Burlakov, N. I. Yakovleva, et al., Usp. Prikl. Fiz. 1, 346 (2013).
K. O. Boltar, M. V. Sednev, D. V. Smirnov, et al., Pat. Appl. No. 2014147928, Russia (27.12.2014).
K. O. Boltar, E. N. Zubkova, N. A. Irodov, et al., Prikl. Fiz., No. 4, 5 (2013).
K. O. Boltar, I. I. Taubkin, M. V. Sednev, et al., Prikl. Fiz., No. 6, 72 (2013).
K. O. Boltar, M. V. Sednev, Yu. P. Sharonov, et al., Prikl. Fiz., No. 4, 51 (2014).
S. V. Dudin, FIP FIP PSE 4 (1–2), 121 (2006).
M. B. Reine, A. Hairston, P. Lamarre, et al., Proc. SPIE 6119, 611901 (2006).
J. John, P. Malinowski, P. Aparicio, et al., Proc. SPIE 6585, 658505 (2007).
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Original Russian Text © D.V. Smirnov, K.O. Boltar, M.V. Sednev, Yu.P. Sharonov, 2015, published in Prikladnaya Fizika, 2015, No. 4, pp. 66–71.
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Smirnov, D.V., Boltar, K.O., Sednev, M.V. et al. Characteristics of heteroepitaxial structures Al x Ga1–x N for p–i–n diode focal plane arrays. J. Commun. Technol. Electron. 61, 358–362 (2016). https://doi.org/10.1134/S1064226916030189
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DOI: https://doi.org/10.1134/S1064226916030189