Abstract
The conductivity and photoconductivity of ZnSe crystals doped with transition elements are studied. It is shown that the doping of ZnSe crystals with 3d impurity elements is not accompanied by the appearance of electrically active levels of these impurities. At the same time, the introduction of these impurities into the cation sublattice brings about the formation of electrically active intrinsic defects. It is established that ZnSe crystals doped with Ti, V, Cr, Fe, Co, or Ni exhibit high-temperature impurity photoconductivity. Photoconductivity mechanisms in the crystals are proposed. From the position of the first ionization photoconductivity band, the energies of ground states of 3d 2+ ions in ZnSe crystals are determined.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. V. Fedorov, S. B. Mirov, A. Gallian, D. V. Badikov, M. P. Frolov, Yu. V. Korostelin, V. I. Kozlovsky, A. I. Landman, Yu. P. Podmar’kov, V. A. Akimov, and A. A. Voronov, IEEE J. Quant. Electron. 42, 907 (2006).
I. T. Sorokina, E. Sorokin, S. B. Mirov, V. V. Fedorov, V. Badikov, V. Panyutin, and K. Schaffers, Opt. Lett. 27, 1040 (2002).
A. N. Avdonin, G. V. Kolibaba, D. D. Nedeoglo, N. D. Nedeoglo, and V. P. Sirkeli, J. Optoelectron. Adv. Mater. 7, 733 (2005).
C. Kim, J. M. Peppers, D. V. Martyshkin, V. V. Fedorov, and S. B. Mirov, Proc. SPIE 7193, 71932R (2009).
T. Konak, M. Tekavec, V. V. Fedorov, and S. B. Mirov, Opt. Mater. Express 3, 777 (2013).
Yu. A. Nitsuk, Semiconductors 48, 142 (2014).
Yu. A. Nitsuk, Semiconductors 47, 736 (2013).
Yu. F. Vaksman, Yu. A. Nitsuk, V. V. Yatsun, A. S. Nasibov, and P. V. Shapkin, Semiconductors 44, 141 (2010).
Yu. F. Vaksman, Yu. A. Nitsuk, V. V. Yatsun, A. S. Nasibov, and P. V. Shapkin, Semiconductors 44, 444 (2010).
Yu. F. Vaksman, V. V. Pavlov, Yu. A. Nitsuk, Yu. N. Purtov, A. S. Nasibov, and P. V. Shapkin, Semiconductors 40, 794 (2006).
V. A. Kasiyan, D. D. Nedeoglo, and N. D. Nedeoglo, Inorg. Mater. 37, 122 (2001).
J. M. Noras and J. W. Allen, J. Phys. C: Solid State Phys. 13, 3511 (1980).
A. Zunger, Solid State Phys. 39, 276 (1986).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Yu.A. Nitsuk, Yu.F. Vaksman, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 6, pp. 783–786.
Rights and permissions
About this article
Cite this article
Nitsuk, Y.A., Vaksman, Y.F. Electrical properties of ZnSe crystals doped with transition elements. Semiconductors 51, 751–754 (2017). https://doi.org/10.1134/S1063782617060239
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782617060239