Abstract
Analytical expressions describing the dependences of the p +–n-junction leakage current on the doping level of the p +-type region are derived by taking into account a whole set of nonlinear physical effects: electron–hole scattering, Auger recombination, band-gap narrowing, and nonlinear dependences of the charge-carrier lifetime and mobility on the doping level. It is shown that the dependence for the leakage current has a minimum at which the injection ability of the p +-type emitter is at a maximum. The dependence of the extremum position on the main parameters of the heavily doped p + layer is analyzed. The data obtained make it possible to optimize the structure of high-power silicon devices and to facilitate the adequacy of numerical calculations.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Landoldt-Bornstein, Numerical Data and Functional Relationships in Science and Technology (Springer, Berlin, 1987), Vol. 22a.
Handbook Series of Semiconductor Parameters, Vol. 1: Elementary Semiconductors and A3B5 Compounds, Ed. by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (World Scientific, Singapore, New Jersey, London, Hong Kong, 1996).
M. E. Levinshtein and T. T. Mnatsakanov, IEEE Trans. Electron Dev. 49, 702 (2002).
A. Herlet, Solid State Electron. 11, 717 (1968).
M. E. Levinshtein, T. T. Mnatsakanov, A. K. Agarwal, and J. W. Palmour, Semicond. Sci. Technol. 26, 055024 (2011).
I. V. Grekhov and A. E. Otblesk, Radiotekh. Elektron. 19, 1483 (1974).
T. T. Mnatsakanov, B. N. Gresserov, and L. I. Pomortseva, Solid State Electron. 38, 225 (1995).
V. A. Kuz’min, T. T. Mnatsakanov, and V. B. Shuman, Sov. Tech. Phys. Lett. 6, 299 (1980).
T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, and S. N. Yurkov, Semiconductors 38, 56 (2004).
J. W. Slotboom and H. C. de Graaf, Solid State Electron. 19, 857 (1976).
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © T.T. Mnatsakanov, M.E. Levinshtein, V.B. Shuman, B.M. Seredin, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 6, pp. 830–834.
Rights and permissions
About this article
Cite this article
Mnatsakanov, T.T., Levinshtein, M.E., Shuman, V.B. et al. On the limit of the injection ability of silicon p +–n junctions as a result of fundamental physical effects. Semiconductors 51, 798–802 (2017). https://doi.org/10.1134/S1063782617060227
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782617060227