Abstract
InGaN/GaN structures with dense arrays of InGaN nanodomains were grown by metallorganic chemical vapor deposition. Lasing in vertical direction occurs at low temperatures, indicating ultrahigh gains (∼ 105 cm−1) in the active region. Fabrication of an effective AlGaN/GaN distributed Bragg reflector with reflectivity exceeding 90% enables vertical lasing at room temperature in structures with a bottom distributed Bragg reflector, despite the absence of a well-reflecting upper mirror. The lasing wavelength is 401 nm, and the threshold excitation density is 400 kW/cm2.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 4, 2000, pp. 496–503.
Original Russian Text Copyright © 2000 by Krestnikov, Sakharov, Lundin, Musikhin, Kartashova, Usikov, Tsatsul’nikov, Ledentsov, Alferov, Soshnikov, Hahn, Neubauer, Rosenauer, Litvinov, Gerthsen, Plaut, Hoffmann, Bimberg.
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Krestnikov, I.L., Sakharov, A.V., Lundin, W.V. et al. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots. Semiconductors 34, 481–487 (2000). https://doi.org/10.1134/1.1188011
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DOI: https://doi.org/10.1134/1.1188011