Abstract
Conditions are investigated for the injection of arsenic into gallium nitride layers grown by metal-organic vapor-phase epitaxy. It is shown that the deposition of GaAs on a GaN surface relieves stresses in the GaN layer. The high-temperature overgrowth of a thin GaAs layer by a GaN layer causes As atoms to diffuse into the GaN, produces a thick, homogeneously doped GaN:As region, and creates a bright band in the photoluminescence spectrum with a maximum at ∼2.5 eV.
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References
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, Appl. Phys. Lett. 73, 2564 (1998).
Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, Appl. Phys. Lett. 70, 981 (1997).
S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, Appl. Phys. Lett. 73, 830 (1998).
L. Bellaiche, S.-H. Wei, and A. Zunger, Appl. Phys. Lett. 70, 3558 (1997).
L. J. Guido, P. Mitev, M. Gherasimova, and B. Gaffey, Appl. Phys. Lett. 72, 2005 (1998).
R. D. Dupuis, J. Cryst. Growth 178, 56 (1997).
W. V. Lundin, A. S. Usikov, and U. I. Ushakov, M. V. Stepanov, B. V. Pushnyi, N. M. Shmidt, V. Tret’yakov, M. V. Maximov, and A. V. Sakharov, in Seventh European Conference on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, EW MOVPE VII, Workshop Booklet (Berlin, 1997), F10.
J. C. Zolper, M. H. Crawford, J. Howard, J. Ramer, and S. D. Hersee, Appl. Phys. Lett. 68, 200 (1996).
X. Li, S. Kim, E. E. Reuter, S. G. Bishop, and J. J. Coleman, Appl. Phys. Lett. 72, 1990 (1998).
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Fiz. Tekh. Poluprovodn. 33, 791–794 (July 1999)
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Tsatsul’nikov, A.F., Ber, B.Y., Kartashova, A.P. et al. Investigation of MOVPE-grown GaN layers doped with As atoms. Semiconductors 33, 728–730 (1999). https://doi.org/10.1134/1.1187770
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DOI: https://doi.org/10.1134/1.1187770