Abstract
Charge transport processes at the interface of n-GaAs (100) with an aqueous HCl solution are studied by electrochemical impedance spectroscopy. It is found that when open-circuit potential and anodic potentials are applied to the semiconductor the impedance spectra contain two capacitive semicircles corresponding to the capacitances of the space charge layer and surface states. In the case of open-circuit potential, semiconductor band bending at the interface with the solution is about 0.7 eV and the density of occupied surface states in the dark and under daylight conditions is 1.6 and 2.8 × 1012 cm2 eV−1, respectively. When cathode potentials are applied to GaAs, hydrogen evolution begins at the semiconductor/electrolyte interface and an additional inductive loop appears in the impedance spectra. At the same time, the density of occupied surface states increases considerably both due to a straightening of the semiconductor bands and to the appearance of As-H bonds. Thus, charge transport through the n-GaAs (100)/aqueous HCl solution interface is always mediated by semiconductor surface states.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. Suzuki, M Ogawa, Appl. Phys. Lett. 31, 473 (1977).
R. P. Vasquez, B. F. Lewis, and F. J. Grunthaner, J. Vac. Sci. Technol. B 1, 791 (1983).
O. E. Tereshchenko, S. I. Chikichev, and A. S. Terekhov, J. Vac. Sci. Technol. A 17, 2655 (1999).
B. H. Ern, M. Stchakovsky, F. Ozanam, and J.-N. Chazalviel, J. Electrochem. Soc. 145, 447 (1998).
R. Memming, Semiconductor Electrochemistry (Wiley-VCH, Weinheim, 2001).
T. A. Abshere and J. L. Richmond, J. Phys. Chem. B 104, 1602 (2000).
Y. Ishikawa, T. Fujui, and H. Hasegawa, J. Vac. Sci. Technol. B 15, 1163 (1997).
I. Yagi, S. Idojiri, T. Aatani, and K. Uosaki, J. Phys. Chem. B 109, 5021 (2005).
Y. Huang, J. Luo, and D. G. Ivey, Thin Solid Films 496, 724 (2006).
Z. Hens and W. P. Gomes, J. Phys. Chem. B 104, 7725 (2000).
G. Horowitz, P. Allongue, and H. Cachet, J. Electrochem. Soc. 131, 2563 (1984).
V. Lazarescu, M. F. Lazarescu, E. Santos, and W. Schmickler, Electrochim. Acta 49, 4231 (2004).
C. Debiemme-Chuovy and H. Cachet, J. Phys. Chem. C 112, 18183 (2008).
P. T. Chen, Y. Sun, E. Kim, P. C. McIntyre, W. Tsai, M. Garner, P. Pianetta, Y. Nishi, and C. O. Chui, J. Appl. Phys. 103, 034106 (2008).
M. V. Lebedev, E. Mankel, T. Mayer, and W. Jaegermann, J. Phys. Chem. C 112, 18510 (2008).
M. V. Lebedev, E. Mankel, T. Mayer, and W. Jaegermann, Phys. Status Solidi C 7, 193 (2010).
K. W. Frese and S. R. Morrison, J. Electrochem. Soc. 126, 1235 (1979).
S. D. Offsey, J. M. Woodall, A. C. Warren, P. D. Kirchner, T. I. Chappell, and G. D. Pettit, Appl. Phys. Lett. 48, 475 (1986).
J.-F. Fan, Y. Kurata, and Y. Nannichi, Jpn. J. Appl. Phys. 28, L2255 (1989).
G. S. Chang, W. C. Hwang, Y. C. Wang, Z. P. Yang, and J. S. Hwang, J. Appl. Phys. 86, 1765 (1999).
X. Li and P. W. Bohn, J. Electrochem. Soc. 147, 1740 (2000).
C. M. Finnie, X. Li, and P. W. Bohn, J. Appl. Phys. 86, 4997 (1999).
D. Liu, T. Zhang, R. A. LaRue, J. S. Harris, and T. W. Sigmon, Appl. Phys. Lett. 53, 1059 (1988).
T. Mayer, M. Lebedev, R. Hunger, and W. Jaegermann, Appl. Surf. Sci. 252, 31 (2005).
B. H. Erné, F. Ozanam, and J.-N. Chazalviel, J. Phys. Chem. B 103, 2948 (1999).
B. H. Erné, and D. Vanmaekelbergh, J. Electrochem. Soc. 144, 3385 (1997).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © M.V. Lebedev, T. Masuda, K. Uosaki, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 4, pp. 487–493.
Rights and permissions
About this article
Cite this article
Lebedev, M.V., Masuda, T. & Uosaki, K. Charge transport at the interface of n-GaAs (100) with an aqueous HCl solution: Electrochemical impedance spectroscopy study. Semiconductors 46, 471–477 (2012). https://doi.org/10.1134/S1063782612040136
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782612040136