Skip to main content
Log in

Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

  • Fabrication, Treatment, and Testing of Materials and Structures
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm2 V−1 s−1 (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Diamond in Electronic Technology, Ed. by V. B. Kvaskov (Energoatomizdat, Moscow, 1990) [in Russian].

    Google Scholar 

  2. K. Kobashi, Diamond Films (Elsevier, Amsterdam, 2005).

    Google Scholar 

  3. J. Isberg, J. Hammersberg, E. Johansson, et al., Science 297, 1670 (2002).

    Article  ADS  Google Scholar 

  4. A. Secroun, O. Brinza, A. Tardieu, et al., Phys. Status Solidi A 204, 4298 (2007).

    Article  ADS  Google Scholar 

  5. R. S. Balmer, J. R. Bron, S. L. Clewes, et al., J. Phys.: Condens. Matter. 21, 364221 (2009).

    Article  Google Scholar 

  6. A. B. Muchnikov, A. L. Vikharev, A. M. Gorbachev, et al., Diamond Relat. Mater. 19, 432 (2010).

    Article  ADS  Google Scholar 

  7. M. P. Gaukroger, P. M. Martineau, M. J. Crowder, I. Friel, S. D. Williams, and D. J. Twitchen, Diamond Relat. Mater. 17, 262 (2008).

    Article  ADS  Google Scholar 

  8. A. L. Vikharev, A. M. Gorbachev, V. A. Koldanov, and D. B. Radishchev, Fiz. Plazmy 31, 376 (2005) [Plasma Phys. Rep. 31, 338 (2005)].

    Google Scholar 

  9. A. Lohstroh, P. J. Sellin, S. G. Wang, et al., Appl. Phys. Lett. 90, 102111 (2007).

    Article  ADS  Google Scholar 

  10. V. S. Vavilov, Usp. Fiz. Nauk 164, 429 (1994) [Phys. Usp. 37, 425 (1994)].

    Article  Google Scholar 

  11. A. A. Mel’nikov, A. M. Zaitsev, V. I. Kurganskii, et al., in Diamond in Electronic Technology, Ed. by V. B. Kvaskov (Energoatomizdat, Moscow, 1990), p. 228.

    Google Scholar 

  12. A. I. Pykhtunova and N. I. Sharapezhnikova, Active Semiconductor Devices Based on Diamond, Review on Electron. Techn., Ser. 1: SHF Techn. (FGUP NPP Pul’sar, Moscow, 2007), p. 16.

    Google Scholar 

  13. K. Ueda, M. Kasu, and T. Makumoto, Appl. Phys. Lett. 90, 122102 (2007).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. B. Muchnikov.

Additional information

Original Russian Text © A.A. Altukhov, A.L. Vikharev, A.M. Gorbachev, M.P. Dukhnovsky, V.E. Zemlyakov, K.N. Ziablyuk, A.V. Mitenkin, A.B. Muchnikov, D.B. Radishev, A.K. Ratnikova, Yu.Yu. Fedorov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 3, pp. 403–407.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Altukhov, A.A., Vikharev, A.L., Gorbachev, A.M. et al. Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond. Semiconductors 45, 392–396 (2011). https://doi.org/10.1134/S106378261103002X

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106378261103002X

Keywords

Navigation