Abstract
Potential of the integrated diagnostics of III–V complex quantum-well (QW) structures used for fabrication of power lasers is demonstrated for the example of GaInP/GaAs/AlGaAs QW structures grown by the metal-organic chemical vapor deposition method. An analysis of cathodoluminescence spectra enabled estimation of the composition of barrier layers, confirmed the existence of a QW, and detected anomalies in its emission associated with compositional changes. An examination of the structures with a transmission electron microscope determined the thickness of barrier layers and the width and composition of the QW, and discovered transition layers near interfaces. The composition of the barrier layers was precisely determined by electron probe microanalysis. The resulting values of the parameters were used in interpretation of X-ray diffraction data, which confirmed the existence of transition regions and revealed composition gradients and partial relaxation in the main part of barrier layers. The integrated study yielded consistent and substantiated data on the layer thickness and composition and data on the quality of interfaces, partial relaxation of the layers, and existence of transition layers and composition gradients.
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Original Russian Text © S.G. Konnikov, A.A. Gutkin, M.V. Zamoryanskaya, T.B. Popova, A.A. Sitnikova, A.A. Shakhmin, M.A. Yagovkina, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 9, pp. 1280–1287.
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Konnikov, S.G., Gutkin, A.A., Zamoryanskaya, M.V. et al. Integrated diagnostics of heterostructures with QW layers. Semiconductors 43, 1240–1247 (2009). https://doi.org/10.1134/S1063782609090255
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DOI: https://doi.org/10.1134/S1063782609090255