Abstract
The influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs transistor heterostructures has been studied by means of X-ray diffraction analysis and transmission electron microscopy. It was found that irradiation with doses exceeding ∼3 × 107 rad leads to destruction of the GaAs layer on the surface of these structures. An irradiation dose of 108 rad significantly deteriorates the surface planarity, with the surface roughness reaching values of several nanometers. In addition, dislocations are formed in the cap layer of the structure. Such a behavior of the cap layer may be due to the existence of an oxide layer on its free surface and to the possible chemical reactions, induced by gamma radiation, between atoms of the cap layer and free radicals formed in the oxide and in the ambient atmosphere. No noticeable changes in the structure and composition of the thin InGaAs channel layer occur at doses lower than 108 rad.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Simono, I. Debusschere, A. Alaerts, and C. Claeys, IEEE Trans. Nucl. Sci. 39, 1964 (1992).
A. V. Bobyl’, R. V. Konakova, V. K. Kononov, et al., Élektron. Tekh., Ser. Upr. Kach., Nos. 4(151)–5(152), 31 (1992).
R. L. Pease, IEEE Trans. Nucl. Sci. 50, 539 (2003).
T. R. Weatherford, IEEE Trans. Nucl. Sci. 50, 704 (2003).
M. J. O’Laughlin, IEEE Trans. Nucl. Sci. 35, 1808 (1987).
A. A. Belyaev, A. E. Belyaev, R. V. Konakova, et al., Semicond. Phys., Quantum Electron. Optoelectron. 2, 98 (1999).
B. D. White, M. Bataiev, S. H. Goss, et al., IEEE Trans. Nucl. Sci. 50, 1934 (2003).
O. Yu. Borkovskaya, N. L. Dmitruk, I. B. Ermolovich, et al., Zh. Tekh. Fiz. 74(3), 44 (2004) [Tech. Phys. 49, 325 (2004)].
D. K. Bowen and B. K. Tanner, High Resolution X-Ray Diffractometry and Topography (Taylor and Francis, London, 1998; Nauka, St. Petersburg, 2002).
A. V. Bobyl’, P. S. Kop’ev, N. N. Ledentsov, et al., Pis’ma Zh. Tekh. Fiz. 16(20), 90 (1990) [Sov. Tech. Phys. Lett. 16, 803 (1990)].
Author information
Authors and Affiliations
Additional information
Original Russian Text © A.V. Bobyl, A.A. Gutkin, P.N. Brunkov, I.A. Zamoryanskaya, M.A. Yagovkina, Yu. G. Musikhin, D.A. Sakseev, S.G. Konnikov, N.A. Maleev, V.M. Ustinov, P.S. Kopjev, V.T. Punin, R.I. Ilkaev, Zh.I. Alferov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 6, pp. 707–710.
Rights and permissions
About this article
Cite this article
Bobyl, A.V., Gutkin, A.A., Brunkov, P.N. et al. An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures. Semiconductors 40, 687–690 (2006). https://doi.org/10.1134/S1063782606060145
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/S1063782606060145