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Improvement of Device Reliability and Variability Using High Pressure Deuterium Annealing

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Abstract

Higher device reliability and lower device-to-device variability are needed to improve the density and yield of integrated circuits. A high pressure deuterium annealing (HPDA) process is proposed for this purpose. Gate-enclosed n-MOSFETs were fabricated on silicon substrate as test vehicles. Then, secondary ion mass spectrometry was performed to verify deuterium absorption. After that, device parameters such as gate leakage, threshold voltage, and subthreshold swing were measured, and the values before and after the HPDA process were compared. The results confirmed device reliability as well as device-to-device variability were improved by the proposed HPDA process.

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Acknowledgements

This work was partially supported by the National Research Foundation of Korea (No. 2020M3H2A1076786 and 2021R1F1A1049456). This research was also partially supported by Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2009-0082580). This work was also partially sponsored by IC Design Education Center (EDA Tool).

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  1. School of Electronics Engineering, Chungbuk National University, Cheongju, 28644, Republic of Korea

    Dae-Han Jung, Sung-Su Yoon, Ja-Yun Ku, Dong-Hyun Wang, Khwang-Sun Lee & Jun-Young Park

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  1. Dae-Han Jung
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  2. Sung-Su Yoon
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  3. Ja-Yun Ku
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Correspondence to Jun-Young Park.

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Jung, DH., Yoon, SS., Ku, JY. et al. Improvement of Device Reliability and Variability Using High Pressure Deuterium Annealing. Trans. Electr. Electron. Mater. 24, 1–4 (2023). https://doi.org/10.1007/s42341-022-00422-8

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