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Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide

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Chemical Research in Chinese Universities Aims and scope

Abstract

Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force.

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Acknowledgements

The authors faithfully thank Prof. YU Xiaoqiang from the State Key Laboratory of Crystal Materials, Shandong University for his kind help in revising this manuscript.

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Authors and Affiliations

  1. State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China

    Xianwei Fu, Yang Liu, Zhi Liu, Ning Dong, Tianyu Zhao, Dan Zhao, Gang Lian & Deliang Cui

  2. Key Laboratory for Special Functional Aggregated Materials, Ministry of Education, School of Chemistry & Chemical Engineering, Shandong University, Jinan, 250100, P. R. China

    Qilong Wang

Authors
  1. Xianwei Fu
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  2. Yang Liu
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  3. Zhi Liu
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  4. Ning Dong
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  5. Tianyu Zhao
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  6. Dan Zhao
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  7. Gang Lian
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  8. Qilong Wang
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  9. Deliang Cui
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Corresponding authors

Correspondence to Gang Lian or Deliang Cui.

Additional information

Supported by the National Natural Science Foundation of China(Nos.51372143, 51102151) and the Natural Science Foundation of Shandong Province, China(No.ZR2015EM006).

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Fu, X., Liu, Y., Liu, Z. et al. Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide. Chem. Res. Chin. Univ. 34, 95–100 (2018). https://doi.org/10.1007/s40242-018-7297-9

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  • DOI: https://doi.org/10.1007/s40242-018-7297-9

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