Abstract
As a carbon source for hot filament chemical vapor deposition of boron-doped diamond (BDD), cost-effective acetone (C3H6O) was used instead of commonly used methane gas. In this case, tantalum filaments turned out to be more suitable than tungsten filaments because tantalum is more oxidation-resistant and can be heated to much higher temperature without evaporation than tungsten. As the acetone flux was varied, the hydrogen flux was also varied so that the mixture of acetone and hydrogen fluxes was fixed at 500 standard cubic centimeter per minute (sccm). Trimethyl borate (TMB) was used as a boron source. As the acetone flux was varied, the TMB flux was also varied so that the boron doping of 11,400 ppm was maintained. As the flux of acetone was increased from 90 to 170 sccm, the grain size and the film thickness of BDD increased. In this range of acetone fluxes, the films showed well-defined (111) facets, indicating that the high quality diamond was deposited. When the acetone flux was increased to 210 sccm, the grain size decreased abruptly and the film thickness, which represents the deposition rate, decreased also. When the acetone flux was increased to 250 sccm, the grain size further decreased, producing a cauliflower structure and the film thickness further decreased. The potential window, which is measured as electrochemical properties of BDD, increased as the acetone flux increased from 90 to 170 sccm and did not change much between 170 and 250 sccm. From this experiment, it was confirmed that varying the flux of acetone could control the morphology, the growth rate and the electrochemical properties of the BDD film.
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Li, Y., Li, Y.D., Wang, Y., Zhang, J., Song, M.S., She, Y.C., Chen, X.Z.: Synthesis of large diamond single crystals under high pressure and high temperature through effective utilization of the synthesis cavity. CrystEngComm 20, 4127–4132 (2018)
May, P.W., Mankelevich, Y.A.: From ultrananocrystalline diamond to single crystal diamond growth in hot filament and microwave plasma-enhanced CVD reactors: a unified model for growth rates and grain sizes. J. Phys. Chem. C 112, 12432–12441 (2008)
Palyanov, Y.N., Kupriyanov, I.N., Borzdov, Y.M.: High-pressure synthesis and characterization of Sn-doped single crystal diamond. Carbon 143, 769–775 (2019)
Wang, Y.K., Yin, S., Lei, L., Wang, Q.M., Wang, W.D., Chen, H.Y., Zhang, Y., Liu, F.M., Hu, Y., Liu, J., Gao, S.P., Peng, F., He, X.J., He, D.W.: Enhanced hardness of CVD diamond after high pressure and high-temperature treatments. High Press. Res. 35, 363–371 (2015)
Amaral, M., Fernandes, A.J.S., Vila, M., Oliveira, F.J., Silva, R.F.: Growth rate improvements in the hot-filament CVD deposition of nanocrystalline diamond. Diam. Relat. Mater. 15, 1822–1827 (2006)
Chen, L.C., Miao, X.Y., Ma, H.A., Guo, L.S., Wang, Z.K., Yang, Z.Q., Fang, C., Jia, X.P.: Synthesis and characterization of diamonds with different nitrogen concentrations under high pressure and high temperature conditions. CrystEngComm 20, 7164–7169 (2018)
Hirmke, J., Schwarz, S., Rottmair, C., Rosiwal, S.M., Singer, R.F.: Diamond single crystal growth in hot filament CVD. Diam. Relat. Mater. 15, 536–541 (2006)
Konoplyuk, S., Abe, T., Takagi, T., Uchimoto, T.: Hot filament CVD diamond coating of TiC sliders. Diam. Relat. Mater. 16, 609–615 (2007)
Gomez-Ruiz, B., Gomez-Lavin, S., Diban, N., Boiteux, V., Colin, A., Dauchy, X., Urtiaga, A.: Boron doped diamond electrooxidation of 6:2 fluorotelomers and perfluorocarboxylic acids. Application to industrial wastewaters treatment. J. Electroanal. Chem. 798, 51–57 (2017)
Vasilie, S., Manea, F., Baciu, A., Pop, A.: Dual use of boron-doped diamond electrode in antibiotics-containing water treatment and process control. Process Saf. Environ. 117, 446–453 (2018)
Jevtic, S., Stefanovic, A., Stankovic, D.M., Pergal, M.V., Ivanovic, A.T., Jokic, A., Petkovic, B.B.: Boron-doped diamond electrode—a prestigious unmodified carbon electrode for simple and fast determination of bentazone in river water samples. Diam. Relat. Mater. 81, 133–137 (2018)
Song, C.W., Lee, Y.H., Heo, S.Y., Hwang, N.M., Choi, S., Kim, K.H.: Computer simulation of temperature parameter for diamond formation by using hot-filament chemical vapor deposition. Coatings 8, 15 (2018)
Song, C.W., Lee, Y.H., Choi, S., Hwang, N.M., Kim, K.H.: Temperature simulation and diamond deposition behavior with distance between filament and susceptor during hot-filament chemical vapor deposition. Nanosci. Nanotechnol. Lett. 10, 761–766 (2018)
Amaral, M., Silva, D.J., Fernandes, A.J.S., Costa, F.M., Oliveira, F.J., Silva, R.F.: Surface activation pre-treatments for NCD films grown by HFCVD. Vacuum 83, 1228–1232 (2009)
Amaral, M., Almeida, F., Fernandes, A.J.S., Costa, F.M., Oliveira, F.J., Silva, R.F.: The role of surface activation prior to seeding on CVD diamond adhesion. Surf. Coat. Technol. 204, 3585–3591 (2010)
Yang, T.M., Wei, Q.P., Qi, Y., Yu, Z.M.: The diffusion behavior of carbon in sputtered tungsten film and sintered tungsten block and its effect on diamond nucleation and growth. Diam. Relat. Mater. 52, 49–58 (2015)
Nasieka, I., Strelchuk, V., Naseka, V., Stubrov, Y., Dudnik, S., Gritsina, V., Opalev, O., Koshevoy, K., Strel’nitskij, V., Tkach, V., Boyko, M., Antypov, I.: An analysis of the specificity of defects embedded into (100) and (111) faceted CVD diamond microcrystals grown on Si and Mo substrates by using E/H field discharge. J. Cryst. Growth 491, 103–110 (2018)
Tang, C.J., Fernandes, A.J.S., Costa, F., Pinto, J.L.: Effect of microwave power and nitrogen addition on the formation of 100 faceted diamond from microcrystalline to nanocrystalline. Vacuum 85, 1130–1134 (2011)
Ushizawa, K., Watanabe, K., Ando, T., Sakaguchi, I., Nishitani-Gamo, M., Sato, Y., Kanda, H.: Boron concentration dependence of Raman spectra on 100 and 111 facets of B-doped CVD diamond. Diam. Relat. Mater. 7, 1719–1722 (1998)
Hartmann, P., Bohr, S., Haubner, R., Lux, B., Wurzinger, P., Griesser, M., Bergmaier, A., Dollinger, G., Sternschulte, H., Sauer, R.: Diamond growth with boron addition. Int. J. Refract. Met. Hard Mater. 16, 223–232 (1998)
Badzian, A.R., Badzian, T., Roy, R., Messier, R., Spear, K.E.: Crystallization of diamond crystals and films by microwave assisted CVD. 2. Mater. Res. Bull. 23, 531–548 (1988)
Salvadori, M.C., Brewer, M.A., Ager, J.W., Krishnan, K.M., Brown, I.G.: The effect of a graphite holder on diamond synthesis by microwave plasma chemical vapor-deposition. J. Electrochem. Soc. 139, 558–560 (1992)
Jeon, J.D., Park, C.J., Kim, D.Y., Hwang, N.M.: Experimental confirmation of charged carbon clusters in the hot filament diamond reactor. J. Cryst. Growth 213, 79–82 (2000)
Jeon, I.D., Park, C.J., Kim, D.Y., Hwang, N.M.: Effect of methane concentration on size of charged clusters in the hot filament diamond CVD process. J. Cryst. Growth 223, 6–14 (2001)
Park, J.W., Kim, K.S., Hwang, N.M.: Gas phase generation of diamond nanoparticles in the hot filament chemical vapor deposition reactor. Carbon 106, 289–294 (2016)
Ahn, H.-S., Park, H.-M., Kim, D.-Y., Hwang, N.M.: Observation of carbon clusters of a few nanometers in the oxyacetylene diamond CVD process. J. Cryst. Growth 234, 399–403 (2002)
Mortet, V., Taylor, A., Zivcova, Z.V., Machon, D., Frank, O., Hubik, P., Tremouilles, D., Kavan, L.: Analysis of heavily boron-doped diamond Raman spectrum. Diam. Relat. Mater. 88, 163–166 (2018)
Long, H.Y., Luo, H., Luo, J.Q., Xie, Y.N., Deng, Z.J., Zhang, X.W., Wang, Y.J., Wei, Q.P., Yu, Z.M.: The concentration gradient of boron along the growth direction in boron doped chemical vapor deposited diamond. Mater. Lett. 157, 34–37 (2015)
Mortet, V., Zivcova, Z.V., Taylor, A., Frank, O., Hubik, P., Tremouilles, D., Jomard, F., Barjon, J., Kavan, L.: Insight into boron-doped diamond Raman spectra characteristic features. Carbon 115, 279–284 (2017)
Liu, Z.L., Li, H.J., Li, M.J., Li, C.P., Qian, L.R., Su, L., Yang, B.H.: Preparation of polycrystalline BDD/Ta electrodes for electrochemical oxidation of organic matter. Electrochim. Acta 290, 109–117 (2018)
Son, M.J., Zhang, T.F., Jo, Y.J., Kim, K.H.: Enhanced electrochemical properties of the DLC films with an arc interlayer, nitrogen doping and annealing. Surf. Coat. Technol. 329, 77–85 (2017)
Jo, Y.J., Zhang, T.F., Son, M.J., Kim, K.H.: Synthesis and electrochemical properties of Ti-doped DLC films by a hybrid PVD/PECVD process. Appl. Surf. Sci. 433, 1184–1191 (2018)
Acknowledgements
This work was supported by the Global Frontier R&D Program (2013M3A6B1078874) of the Center for Hybrid Interface Materials (HIM) funded by the Ministry of Science, ICT & Future Planning.
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Song, C.W., Jin, R., Hwang, NM. et al. Deposition Behavior of Boron-Doped Diamond with Varying Amount of Acetone by Hot Filament Chemical Vapor Deposition. Electron. Mater. Lett. 15, 630–638 (2019). https://doi.org/10.1007/s13391-019-00152-9
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DOI: https://doi.org/10.1007/s13391-019-00152-9