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Study of the spectral and power characteristics of In0.2Ga0.8N/GaN superluminescent light-emitting diodes by taking into account the piezoelectric polarization fields

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Abstract

In this study, the effects of the piezoelectric polarization field have been investigated on the spectral and power characteristics of In0.2Ga0.8N/GaN superluminescent light-emitting diodes. The Schrödinger and Poisson equations, the rate equations in the multiple quantum well active region and separate confinement heterostructure layers, and the optical propagating equations have been solved in the presence of the piezoelectric field. The results have been compared with results of the case of without piezoelectric field. According to the results, in the presence of piezoelectric field, the red-shift occurs in the spectra, and the width of spectrum increases. Also, the piezoelectric field decreases the peak intensity of spectrum and modal gain of the device.

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Authors and Affiliations

  1. Department of Physics, Ahar Branch, Islamic Azad University, Ahar, Iran

    Hassan Absalan & Nasser Moslehi Milani

  2. Department of Physics, Faculty of Science, Urmia University, Urmia, Iran

    Mir Maqsood Golzan

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  1. Hassan Absalan
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  2. Mir Maqsood Golzan
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  3. Nasser Moslehi Milani
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Correspondence to Hassan Absalan.

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Absalan, H., Golzan, M.M. & Moslehi Milani, N. Study of the spectral and power characteristics of In0.2Ga0.8N/GaN superluminescent light-emitting diodes by taking into account the piezoelectric polarization fields. Indian J Phys 96, 1821–1828 (2022). https://doi.org/10.1007/s12648-021-02105-1

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