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Tuning zinc doping content to optimize optical and structural properties of Cd1−xZnxS buffer layers

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Abstract

In this paper, Cd1−xZnxS thin films were prepared by chemical bath deposition (CBD), and the effects of different zinc doping content on the morphological structure and optical properties of Cd1−xZnxS buffer layers are systematically discussed. The experimental results show that in the deposition process of different substrates, the crystal structure of the film is all hexagonal, and when the concentration of zinc sulfate (ZnSO4) precursor is varied from 0 to 0.025 M, the films are uniform and dense. With the increase of zinc content, the X-ray diffraction (XRD) peak of the films shifted behind that of CdS film (002). It showed 70% to 90% transmittance in the visible region and the optical band gap increased gradually. The band gap value of the films obtained ranged from 2.43 eV to 3.01 eV. It shows the potential feasibility of its application to photovoltaic devices.

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Authors and Affiliations

  1. Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China

    Xin Xie, Yuming Xue, Chaoqun Lü, Yifan Wang, Binbin Wen & Jiangchao Wang

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  1. Xin Xie
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  2. Yuming Xue
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  3. Chaoqun Lü
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  4. Yifan Wang
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  5. Binbin Wen
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  6. Jiangchao Wang
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Correspondence to Yuming Xue.

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The authors declare that there are no conflicts of interest related to this article.

This work has been supported by the Fund for Creative Research Groups.

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Xie, X., Xue, Y., Lü, C. et al. Tuning zinc doping content to optimize optical and structural properties of Cd1−xZnxS buffer layers. Optoelectron. Lett. 19, 25–30 (2023). https://doi.org/10.1007/s11801-023-2112-3

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  • DOI: https://doi.org/10.1007/s11801-023-2112-3

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