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Electronic and optoelectronic properties of Al/coumarin doped Pr2Se3–Tl2Se/p-Si devices

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Abstract

In this study, coumarin-doped Pr2Se3–Tl2Se (0.00, 0.05, 0.1, 0.3 wt% coumarin) were covered on the front side of a p-Si substrate by drop coating method and thus Al/coumarin doped Pr2Se3–Tl2Se/p-Si diodes were fabricated. The electronic and optoelectronic properties of the prepared diodes were investigated. The highest rectification ratio (RR = IF/IR) value was found to be 2.24 × 105 for the diode having 0.05 wt% coumarin doping at dark and ± 5 V. Also, the highest Iphoto/Idark photosensitivity was found to be 1327 for the diode which has 0.1 wt% coumarin doping at 100 mW/cm2 and − 5 V. The photocurrent of the diodes is higher than the dark current and increases by the increase of the light intensity. These results confirm that the fabricated diodes show a strong photovoltaic behavior. The electronic parameters of the diodes, for example ideality factor and barrier height values, were calculated by the use of current–voltage characteristics. The transient measurement proves that the diodes show both photodiode and photocapacitor behaviors. The change on the conductance and capacitance by the frequency is attributed to the existence of interface states. Thus, the obtained results suggest that the prepared diodes might be used as a photosensor in the applications of optoelectronic.

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Acknowledgements

The authors extend their appreciation to the International Scientific Partnership Program ISPP at King Saud University for funding this research work through ISPP# 0046.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    A. Tataroğlu

  2. Faculty of Arts and Sciences, Adiyaman University, 02040, Adiyaman, Turkey

    C. Ahmedova & G. Barim

  3. Department of Chemistry, Faculty of Science, King Khalid University, P. O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  4. Research Center for Advanced Materials Science, King Khalid University, P. O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  5. Unit of Science and Technology, Faculty of Science, King Khalid University, P. O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  6. Department of Electrical and Electronics Engineering, Faculty of Engineering, Sinop University, Sinop, Turkey

    Abdulkerim Karabulut

  7. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia

    Ahmed A. Al-Ghamdi

  8. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia

    W. A. Farooq

  9. Department of Physics, Faculty of Science, Firat University, Elazig, Turkey

    F. Yakuphanoglu

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  1. A. Tataroğlu
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  2. C. Ahmedova
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  4. Abdullah G. Al-Sehemi
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Correspondence to Abdulkerim Karabulut.

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Tataroğlu, A., Ahmedova, C., Barim, G. et al. Electronic and optoelectronic properties of Al/coumarin doped Pr2Se3–Tl2Se/p-Si devices. J Mater Sci: Mater Electron 29, 12561–12572 (2018). https://doi.org/10.1007/s10854-018-9372-x

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