Abstract
In this paper, Pb(Zr0.52Ti0.48)O3 thin films were successfully deposited on platinized silicon substrates and silicon substrates with PbTiO3 seed layer by a modified sol–gel processing. The results show that the films were more likely to grow on platinum substrate, and the PbTiO3 seed layer promoted the grain growth and influenced the crystal orientation of the films. With the annealing temperature and sintering time rising (from 600 °C for 1 h to 700 °C for 2 h) in the new method, the crystal orientation of PZT deposited on Pt substrate with PbTiO3 seed layer changed from (100) to (111), and the grain size increased from dozens to hundreds of nanometer. Meanwhile, its ferroelectric and dielectric properties were greatly improved with 2Pr from 10.78 to 42.12 μC/cm2and εr from 348 to 978, respectively.
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J.P.B. Silva, S.A.S. Rodrigues, K.C. Sekhar et al., J. Mater. Sci.: Mater. Electron. 24(12), 5097 (2013)
N. Setter, J. Eur. Ceram. Soc. 21(10), 1279 (2001)
M. Khodaei, S.A.S Ebrahimi, Y.J. Park et al., J. Mater. Sci. Mater. Electron. 24(12), 24(10), 3736 (2013)
L.H. Parker, A.F. Tasch, Circuits and devices magazine. IEEE 6(1), 17 (1990)
H.B. Fang, J.Q. Liu, Z.Y. Xu et al., Microelectron. J. 37(11), 1280 (2006)
J. Zeng, M. Zhang, L. Wang et al., J. Phys.: Condens. Matter 11(4), 1139 (1999)
K. Iijima, Y. Tomita, R. Takayama et al., J. Appl. Phys. 60(1), 361 (1986)
H. Guo, D. Bao, Y. Zhang, Ultrasonics Symposium, 2008. IUS 2008. IEEE, 2130 (2008)
J. Li, C. Wang, J. Ma et al., Microsyst. Technol. 19(2), 211 (2013)
H. Brunckova, Ľ. Medvecký, Ceramics-Silikáty 55(1), 36 (2011)
B.H. Chen, L. Wu, M.C. Chure et al., SPAWDA, 2010 Symposium on. IEEE, 310 (2010)
X.J. Meng, J.G. Cheng, J.L. Sun et al., Thin Solid Films 368(1), 22 (2000)
Z. Chen, C. Yang, B. Li et al., J. Cryst. Growth 285(4), 627 (2005)
J.F. Scott, C.A. Araujo, B.M. Melnick et al., J. Appl. Phys. 70(1), 382 (1991)
K. Wasa, T. Matsushima, Joint UFFC, EFTF and PFM Symposium (2013)
Y.S. Jeong, H.U. Lee, S.A. Lee et al., Curr. Appl. Phys. 9(1), 115 (2009)
D. Kaewchinda, T. Chairaungsri, M. Naksata et al., J. Eur. Ceram. Soc. 20(9), 1277 (2000)
S.B. Majumder, Y.N. Mohapatra, D.C. Agrawal, Ferroelectrics 21(1), 1 (1998)
A. Etin, G.E. Shter, S. Baltianski et al., J. Am. Ceram. Soc. 89(8), 2387 (2006)
T. Kobayashi, M. Ichiki, J. Tsaur et al., Thin Solid Films 489(1), 74 (2005)
S.Y. Chen, I.W. Chen, Thin Solid Films 77(9), 2332 (1994)
Z. Huang, Q. Zhang, R.W. Whatmore, J. Appl. Phys. 85(10), 7355 (1999)
D.A. Tossell, N.M. Shorrocks, J.S. Obhi et al., TfC16. Ferroelectrics 134(1), 297 (1992)
S.Q. Zhang, W.L. Li, N. Li et al., Phys. B 405(11), 2585 (2010)
S. Mhin, K. Nittala, J. Lee et al., J. Am. Ceram. Soc. 97, 2973 (2014)
M.B. Othman, H. Suzuki, K. Murakami et al., Appl. Ferroelectr. 2, 731–734 (1996)
S.K. Pandey, A.R. James, C. Prakash et al., Mater. Sci. Eng. B-Adv. 112(1), 96 (2004)
G.T. Park, C.S. Park, J.J. Choi et al., J. Am. Ceram. Soc. 89(7), 2314 (2006)
M.J. Lefevre, J.S. Speck, R.W. Schwartz et al., J. Mater. Res. 11(08), 2076 (1996)
M. Yaseen, X. Chen, W. Ren et al., Ceram. Int. 39, S471 (2013)
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Xiao, M., Li, S. & Lei, Z. Study of (111)-oriented PZT thin films prepared by a modified sol–gel method. J Mater Sci: Mater Electron 26, 4031–4037 (2015). https://doi.org/10.1007/s10854-015-2941-3
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DOI: https://doi.org/10.1007/s10854-015-2941-3