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Bulk-driven class AB fully-balanced differential difference amplifier

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Abstract

This paper presents a new low-voltage class AB fully-balanced differential difference amplifier (FB-DDA) employing the bulk-driven technique. At the FB-DDA differential pairs the bulk terminal of the MOS transistors are used as signal inputs in order to increase the common-mode input range under low supply voltage. At the class AB output stages the bulk terminal of the MOS transistors are used as control inputs in order to adjust the quiescent currents and compensate them against the process and temperatures (P/T) variation. The voltage supply of the FB-DDA is 0.7 V and the quiescent power consumption is 8.3 µW. The open loop voltage gain is 68 dB and the gain–bandwidth product is 168 kHz for 10 pF capacitive load. The circuit performance was simulated in Cadence/Spectre environment using the TSMC 0.18 µm CMOS process.

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Acknowledgements

Research described in this paper was financed by the National Sustainability Program under Grant LO1401. For the research, infrastructure of the SIX Center was used.

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Authors and Affiliations

  1. Department of Microelectronics, Brno University of Technology, Technická 10, Brno, Czech Republic

    Fabian Khateb

  2. Faculty of Biomedical Engineering, Czech Technical University in Prague, nám. Sítná 3105, Kladno, Czech Republic

    Fabian Khateb

  3. Electronics Laboratory, Physics Department, University of Patras, 26504, Rio, Achaia, Greece

    Spyridon Vlassis

  4. Department of Electrical Engineering, Technical University of Częstochowa, 42-201, Częstochowa, Poland

    Tomasz Kulej

  5. Department of Electrical Engineering, Technological Educational Institute of Western Greece, 26334, Patras, Greece

    George Souliotis

Authors
  1. Fabian Khateb
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  2. Spyridon Vlassis
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  3. Tomasz Kulej
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  4. George Souliotis
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Correspondence to Fabian Khateb.

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Khateb, F., Vlassis, S., Kulej, T. et al. Bulk-driven class AB fully-balanced differential difference amplifier. Analog Integr Circ Sig Process 93, 179–187 (2017). https://doi.org/10.1007/s10470-017-1024-1

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  • DOI: https://doi.org/10.1007/s10470-017-1024-1

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