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Design methodology for low power RF LNA based on the figure of merit and the inversion coefficient

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Abstract

The complexity of radiofrequency circuit design comes from the large number of parameters to be adjusted. Constant node shrink in CMOS process and variation of technology skills significantly contribute to this complexity. The paper reports on a reliable and portable design methodology based on a low-power figure of merit (FOM) and inversion coefficient applied to the design of a low noise amplifier (LNA). The design procedure considers the circuit specifications and the optimization of the FOM. As a case of study it is applied to 2.4 GHz LNA designed in a 28 nm technology then exploited to compare different CMOS technology nodes: 28, 65, 130 nm.

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Authors and Affiliations

  1. Laboratory IMS, University of Bordeaux, 351 cours de la libération, 33405, Talence Cedex, France

    François Fadhuile, Thierry Taris, Yann Deval & Magali De Matos

  2. STMicroelectronics, Crolles, France

    François Fadhuile & Didier Belot

  3. Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland

    Christian Enz

Authors
  1. François Fadhuile
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  2. Thierry Taris
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  3. Yann Deval
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  4. Magali De Matos
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  5. Didier Belot
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  6. Christian Enz
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Correspondence to François Fadhuile.

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Fadhuile, F., Taris, T., Deval, Y. et al. Design methodology for low power RF LNA based on the figure of merit and the inversion coefficient. Analog Integr Circ Sig Process 87, 275–287 (2016). https://doi.org/10.1007/s10470-016-0718-0

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  • DOI: https://doi.org/10.1007/s10470-016-0718-0

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