Skip to main content
SpringerLink
Log in

Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes

  • Published:
Applied Physics B Aims and scope Submit manuscript

Abstract

Performance of InGaN-based laser diodes (LDs) with different Mg concentrations of electron blocking layer (EBL) is investigated by simulation and experimental methods. It is found from the simulation results that the threshold current decreases and slope efficiency increases, when the Mg concentration of EBL increases from 2 × 1018 to 6 × 1019 cm−3; it is attributed to the suppression of the leakage of electrons and the enhancement of the injection of holes due to the variation of potential barrier for them as the increase of Mg concentration of EBL. These simulation results agree well with the experimental ones, when the Mg concentration of EBL is lower than 7.5 × 1018 cm−3. However, it deteriorates when the Mg concentration increases to 1.2 × 1019 cm−3. It may be due to the increase of the absorption loss of LDs.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

References

  1. S. Essaian, J. Khaydarov, State of the art of compact green lasers for mobile projectors. Opt. Rev. 19, 400 (2012)

    Article  Google Scholar 

  2. D.G. Zhao, J. Yang, Z.S. Liu, P. Chen, J.J. Zhu, D.S. Jiang, Y.S. Shi, H. Wang, L.H. Duan, L.Q. Zhang, H. Yang, Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes. J. Semicond. 38, 051001 (2017)

    Article  ADS  Google Scholar 

  3. F. Liang, J. Yang, D.G. Zhao, Z.S. Liu, J.J. Zhu, P. Chen, D.S. Jiang, Y.S. Shi, H. Wang, L.H. Duan, L.Q. Zhang, H. Yang, Room-temperature continuous-wave operation of GaN-based blue–violet laser diodes with a lifetime longer than 1000 h. J. Semicond. 40, 1 (2019)

    Google Scholar 

  4. Y.F. Huang, Y.C. Chi, M.K. Chen, D.P. Tsai, D.W. Huang, G.R. Lin, Red/green/blue LD mixed white-light communication at 6500 K with divergent diffuser optimization. Opt. Express 26, 23397 (2018)

    Article  ADS  Google Scholar 

  5. D.M. Zhao, D.G. Zhao, Analysis of the growth of GaN epitaxy on silicon. J. Semicond. 39, 033006 (2018)

    Article  ADS  Google Scholar 

  6. D. Robidas, D. Arivuoli, Simulation studies of InGaN based light-emitting diodes to reduce electron overflow problem by designing electron blocking layer. J. Nanosci. Nanotechnol. 6, 4414 (2015)

    Article  Google Scholar 

  7. Y. Zhang, T.T. Kao, J.P. Liu, Z. Lochner, S.S. Kim, J.H. Ryou, R.D. Dupuis, S.C. Shen, Effects of a step-graded AlxGa1−xN electron blocking layer in InGaN-based laser diodes. J. Appl. Phys. 109, 083115 (2011)

    Article  ADS  Google Scholar 

  8. J.R. Chen, C.H. Lee, T.S. Ko, Y.A. Chang, T.C. Lu, H.C. Kuo, S.C. Wang, Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers. J. Lightwave Technol. 26, 329 (2008)

    Article  ADS  Google Scholar 

  9. N.C. Oh, J.G. Lee, Y.Q. Dong, T.S. Kim, H.J. Yu, J.H. Song, Effect of p-AlGaN electron blocking layers on the injection and radiative efficiencies in InGaN/GaN light emitting diodes. Curr. Appl. Phys. 15, S7 (2015)

    Article  Google Scholar 

  10. D.L. Becerra, D.A. Cohen, R.M. Farrell, S.P. Dwnbarrs, S. Nakamura, Effects of active region design on gain and carrier injection and transport of CW (20-2-1) semipolar InGaN laser diodes. Appl. Phys. Express 9, 092104 (2016)

    Article  ADS  Google Scholar 

  11. J. Hengsterler, P. Prajoon, D. Nirmal, Analysis of high efficiency InGaN multiple-quantum-well light-emitting-diodes using InGaN step-graded barriers. J. Nanoelectron Optoelectron. 6, 939 (2018)

    Article  Google Scholar 

  12. J. Yang, D.G. Zhao, D.S. Jiang, P. Chen, J.J. Zhu, Z.S. Liu, W. Liu, F. Liang, S.T. Liu, Y. Xing, M. Li, Enhancing the performance of InGaN/GaN multiple quantum well blue laser diodes by suppressing the overflow of holes. Superlattice Microstruct. 120, 187 (2018)

    Article  ADS  Google Scholar 

  13. J. Yang, D.G. Zhao, D.S. Jiang, X. Li, F. Liang, P. Chen, J.J. Zhu, Z.S. Liu, S.T. Liu, L.Q. Zhang, M. Li, Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region. Opt. Express 25, 287124 (2017)

    Google Scholar 

  14. T. Lan, G.Z. Zhou, Y. Li, C.C. Wang, Z.Y. Wang, Mitigation of efficiency droop in an asymmetric GaN-Based high power laser diode with sandwiched GaN/InAlN/GaN lower quantum barrier. IEEE Photonics J. 10, 1504708 (2018)

    Google Scholar 

  15. F. Liang, D.G. Zhao, D.S. Jiang, Z.S. Liu, J.J. Zhu, P. Chen, J. Yang, W. Liu, X. Li, S.T. Liu, Y. Xing, L.Q. Zhang, W.J. Wang, M. Li, Y.T. Zhang, G.T. Du, Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1−xN lower waveguide. J. Alloys Compd. 731, 243 (2017)

    Article  Google Scholar 

  16. X. Li, D.G. Zhao, D.S. Jiang, P. Chen, Z.S. Liu, J.J. Zhu, M. Shi, D.M. Zhao, W. Liu, Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer. J. Semicond. 37, 014007 (2016)

    Article  Google Scholar 

  17. L.Q. Zhang, D.S. Jiang, J.J. Zhu, D.G. Zhao, Z.S. Liu, S.M. Zhang, H. Yang, Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green. J. Appl. Phys. 105, 023104 (2009)

    Article  ADS  Google Scholar 

  18. M.X. Feng, J.P. Liu, S.M. Zhang, D.S. Jiang, Z.C. Li, D.Y. Li, L.Q. Zhang, F. Wang, H. Wang, H. Yang, Design considerations for GaN-based blue laser diodes with InGaN upper waveguide layer. IEEE J. Sel. Top. Quant. 19, 1500705 (2013)

    Article  Google Scholar 

  19. J. Yang, D.G. Zhao, D.S. Jiang, P. Chen, J.J. Zhu, Z.S. Liu, F. Liang, W. Liu, S.T. Liu, Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer. Opt. Laser Technol. 111, 810 (2019)

    Article  ADS  Google Scholar 

  20. S.T. Liu, J. Yang, D.G. Zhao, D.S. Jiang, F. Liang, P. Chen, J.J. Zhu, Z.S. Liu, W. Liu, Y. Xing, L.Q. Zhang, W.J. Wang, M. Li, Y.T. Zhang, G.T. Du, Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer. Superlattice Microstruct. 113, 690 (2018)

    Article  ADS  Google Scholar 

Download references

Acknowledgements

The authors acknowledge the support from Science Challenge Project (Grant no. TZ2016003), National Natural Science Foundation of China (Grant nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), and Beijing Municipal Science and Technology Project (Grant no. Z161100002116037).

Author information

Authors and Affiliations

  1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    J. Yang, D. G. Zhao, J. J. Zhu, Z. S. Liu, D. S. Jiang, P. Chen, F. Liang, S. T. Liu & Y. Xing

  2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    D. G. Zhao & J. J. Zhu

Authors
  1. J. Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. G. Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. J. Zhu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Z. S. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. D. S. Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. P. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. F. Liang
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. S. T. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Y. Xing
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to D. G. Zhao.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Yang, J., Zhao, D.G., Zhu, J.J. et al. Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes. Appl. Phys. B 125, 235 (2019). https://doi.org/10.1007/s00340-019-7343-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s00340-019-7343-4

Search

Navigation