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Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals

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Abstract

Here, we report a commonly occurring defect related to nitrogen doping in silicon carbide crystals grown by physical vapor transport method while its formation mechanism has remained unclear. It is often mislabeled as planar hexagonal void defect (PHVD) owing to their similar in shape and size on wafer surface. Our results indicate that this is a new type of defect and differs from PHVD with respect to their nitrogen concentrations, void shapes and the connections to micropipe. We found that the carbon-rich vapor during the crystal growth is responsible for the formation of this type of defect. A possible three-stage defect developing mechanism and measures to avoid the defects are proposed.

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Acknowledgments

This work was partially supported by the National Natural Science Foundation of China (Grant Nos. 51072222, 51172270 and 51272276) and by the National High Technology Research and Development Program of China (Grant No. 2011AA03A102).

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Authors and Affiliations

  1. Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Bo Wang, Jingkui Liang, Gang Wang, Wenjun Wang, Huaizhou Zhao & Xiaolong Chen

  2. R&D Center, Beijing Tankeblue Semiconductor Co., Ltd, Beijing, 100190, China

    Tonghua Peng

  3. Collaborative Innovation Center of Quantum Matter, Beijing, China

    Xiaolong Chen

Authors
  1. Bo Wang
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  2. Tonghua Peng
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  3. Jingkui Liang
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  4. Gang Wang
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  5. Wenjun Wang
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  6. Huaizhou Zhao
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  7. Xiaolong Chen
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Correspondence to Xiaolong Chen.

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Wang, B., Peng, T., Liang, J. et al. Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals. Appl. Phys. A 117, 1563–1569 (2014). https://doi.org/10.1007/s00339-014-8594-x

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  • DOI: https://doi.org/10.1007/s00339-014-8594-x

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