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Photon-assisted tunneling versus tunneling of excited electrons in metal–insulator–metal junctions

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Abstract

Photocurrent measurements in Ag–Al2O3–Al metal–insulator–metal junctions under illumination with ultra-short laser pulses reveal that tunneling and internal photoemission of excited electrons are the dominating transport mechanisms. Photon-assisted tunneling is observed under rare conditions that depend critically on the preparation of the interface. The comparison of time-resolved two-pulse correlation measurements with model calculations shows that the photon-induced transport of excited electrons is well described using a one-dimensional many-particle model for two coupled metallic leads, whereas a single-particle model for nonresonant excitation in a rectangular double-minimum potential reveals the signature of photon-assisted tunneling.

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Authors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, 97074, Würzburg, Germany

    A. Thon, M. Merschdorf & W. Pfeiffer

  2. Institut für Chemie, Theoretische Chemie, Universität Potsdam, 14476, Golm, Germany

    T. Klamroth & P. Saalfrank

  3. Institut für Schichten und Grenzflächen, Forschungszentrum Jülich, 52425, Jülich, Germany

    D. Diesing

Authors
  1. A. Thon
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  2. M. Merschdorf
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  3. W. Pfeiffer
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  4. T. Klamroth
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  5. P. Saalfrank
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  6. D. Diesing
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Corresponding author

Correspondence to W. Pfeiffer.

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PACS

73.40.-c; 72.10.-d; 73.40.Gk; 73.50.Pz

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Thon, A., Merschdorf, M., Pfeiffer, W. et al. Photon-assisted tunneling versus tunneling of excited electrons in metal–insulator–metal junctions. Appl Phys A 78, 189–199 (2004). https://doi.org/10.1007/s00339-003-2314-2

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  • DOI: https://doi.org/10.1007/s00339-003-2314-2

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