Abstract
InP is becoming an indispensable material not only for long wavelength opto-electronic devices but also for high frequency devices. Promoted by this requirement, InP bulk crystal technology has been rapidly developed. In the present paper, this development is reviewed in the areas of purification, reduction of dislocation density, semi-insulating crystal growth technology and wafer polishing. The possibility of undoped semi-insulating InP, a highlight topic of recent developments, is also discussed on the basis of experiments.
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Oda, O., Kainosho, K., Kohiro, K. et al. Development of high quality InP bulk crystals. J. Electron. Mater. 20, 1007–1011 (1991). https://doi.org/10.1007/BF03030197
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DOI: https://doi.org/10.1007/BF03030197