Abstract
TiB2 thin film was deposited by laser-arc deposition method on the surface of single crystalline silicon. The morphology, composition, structure and microtribological properties of the film were studied by using XPS, XRD and atomic force/friction force microscope (AFM/FFM). The results show that TiB2 (100) preferred growth on the Si(100) substrate, TiB2(001) preferred growth on the Si(111) substrate. The TiB2 thin film was composed of TiB2 and a small amount of TiO2. The friction coefficient of TiB2 film on substrates Si (100) and Si(111) in microtribological process were 0.087 and 0.073, respectively. TiB2 thin film displayed distinct ability of anti-scratch and wear-resistance.
Similar content being viewed by others
References
Kryshtab, T. G. et al., The influence of TiB-thin film thickness on metal GaAs structural characteristics, Thin Solid Films, 2000, 373: 79–83.[DOI]
Xin, X., Yan, Q., Development of research on TiB2 and its composites. Journal of ceramics, 1999, 20(2): 112–117.
Bai Xinde et al, Preparation with ion beam enhancement deposition and characteristic study of TiB2 thin films, Vacuum science and technology, 1995, 15(3): 185–189.
Todorovic, B., Jokic, T., Rakocevic, Z. et al., Thin Solid Films, 1997, 300: 272. [DOI]
Bhushan, B., Koinkar, V. N., Microtribological studies of doped single-crystal silicon and polysilicon films for MEMS devices, Sensors and Actuator, 1996, A57: 91–102.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Cao, X., Shao, T., Wen, S. et al. Structure and microtribological characteristics of laser-arc deposited TiB2 thin film. SCI CHINA SER G 47 (Suppl 1), 120–126 (2004). https://doi.org/10.1007/BF02690251
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02690251