Summary
Pt-GaN Schottky devices with catalytically active platinum (Pt) electrodes were investigated. Some measurements were also performed on high-electron-mobility transistors based on GaN/AlGaN heterostructures. The response of these devices towards a number of relevant exhaust gas components such as H2, HC, CO, NO and NO2 was tested. Sensitivity and cross sensitivity profiles were found to depend on temperature, the porosity of the Pt gates as well as on the polarity of the underlying GaN material.
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© 2001 Springer-Verlag Berlin Heidelberg
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Schalwig, J., Müller, G., Ambacher, O., Stutzmann, M. (2001). Group III-Nitride based Gas Sensors for Exhaust Gas Monitoring. In: Obermeier, E. (eds) Transducers ’01 Eurosensors XV. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-59497-7_196
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DOI: https://doi.org/10.1007/978-3-642-59497-7_196
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-42150-4
Online ISBN: 978-3-642-59497-7
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