Abstract
Strain is introduced in the fabrication of complementary metal-oxide-semiconductor devices to enhance their channel region carrier mobility [1]. Epitaxial Si1−xGex (15–30at% Ge) or Si1−xCx (1–2at% C) are typical stressor materials. As Ge has a 4% larger lattice constant (0.566 nm) than Si (0.543 nm), Si1−xGex deposited in the source/drain (S/D) regions will induce compressive strain in the Si channel, while Si1−xCx in the S/D will induce tensile strain in the channel [2].
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Favia, P. et al. (2008). Strain study in transistors with SiC and SiGe source and drain by STEM nano beam diffraction. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_8
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DOI: https://doi.org/10.1007/978-3-540-85226-1_8
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