Abstract
Structural and optical properties of structures with nanoscale InAs islands obtained by submonolayer deposition and embedded in an AlxGa1−xAs matrix is investigated. Deposition of several planes of InAs insertions results in formation of arrays of vertically correlated islands. The lateral size of the islands in a column is about 10 nm. Lasing via the ground states of the islands without external optical confinement is demonstrated.
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Tsatsul’Nikov, A.F., Volovik, B.V., Ledentsov, N.N. et al. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition. J. Electron. Mater. 28, 537–541 (1999). https://doi.org/10.1007/s11664-999-0108-9
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DOI: https://doi.org/10.1007/s11664-999-0108-9