Abstract
Optical, electrical, and structural properties of Al2O3 films subjected to silicon-ion implantation and annealing were investigated by means of photoluminescence measurements, current-voltage measurements and transmission electron microscopy. Transmission electron microscopy revealed that silicon nanocrystals were epitaxially formed in ϑ-Al2O3. Visible photolum inescence was observed, for the first time, from Al2O3 films containing silicon nanocrystals. Observed visible photoluminescence seems to be related to quantum size effects in silicon nanocrystals as well as localized radiative recombination centers located at the interface between silicon nanocrystals and matrix, similar to porous Si and other Si nanostructures. The conduction mechanism in the samples was studied by using dc current-voltage measurements. The conduction properties depend on temperature and applied electric fields. The conduction behavior in low electric fields consists of thermally activated region dominated by the Schottky conduction and nonthermally activated region in which carrier transport is controlled by space-charge-limited currents. The conduction behavior under relatively high electric fields is almost independent of temperature and well fitted by space-charge-limited conduction.
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Yanagiya, S., Ishida, M. Optical and electrical properties of Al2O3 films containing silicon nanocrystals. J. Electron. Mater. 28, 496–502 (1999). https://doi.org/10.1007/s11664-999-0101-3
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DOI: https://doi.org/10.1007/s11664-999-0101-3