Abstract
Micromachined silicon resonant pressure sensors have been widely used in automotive industry, medical instrument, aerospace, and military fields due to their high accuracy, long-term stability, and quasi-digital output. This chapter begins with the introduction of the working principle of the resonant pressure sensors, illustrating key relationships between (1) intrinsic resonant frequency and structural parameters, (2) pressure under measurement and resonant frequency shift, and (3) device sensitivity and structural parameters. Then, two kinds of micromachined silicon resonant pressure sensors based on electromagnetic and electrostatic excitations are presented, respectively, where device design, simulation, fabrication, and packaging are discussed in details. Finally, self-temperature compensation approaches are introduced to improve the performance of the micromachined silicon resonant pressure sensors, which can therefore function in a wide temperature range.
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Acknowledgments
We thank the National Basic Research Program of China (973 Program, Grant No. 2014CB744600), the National Natural Science Foundation of China (Grant Nos. 61431019, 61372054 and 61671430), the Beijing Municipal Natural Science Foundation (Grant No. 4152056), the Beijing Municipal Science and Technology Commission (Grant No. D11110100160000), and the Beijing NOVA Program of Science and Technology for financial support.
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Wang, J., Chen, D., Xie, B., Chen, J., Zhu, L., Lu, Y. (2017). A Micromachined Silicon Resonant Pressure Sensor. In: Huang, QA. (eds) Micro Electro Mechanical Systems. Micro/Nano Technologies, vol 2. Springer, Singapore. https://doi.org/10.1007/978-981-10-2798-7_15-1
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DOI: https://doi.org/10.1007/978-981-10-2798-7_15-1
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