III–V Based Magnetic Semiconductors

Living reference work entry

Abstract

(Ga,Mn)As and related (III,Mn)V compounds are at the forefront of spintronics research exploring the synergy of ferromagnetism with the physics and the technology of semiconductors. Over the past 20 years, the research of (Ga,Mn)As has led to a deeper understanding of previously known spintronics phenomena, to discoveries of new effects, and to demonstrations of unprecedented functionalities of experimental spintronics devices with general applicability to a wide range of magnetic materials. In this chapter we review some of the basic structural, magnetic, electronic, and optical properties of the ferromagnetic (III,Mn)V semiconductors, as well as the devices fabricated from these model spintronics materials.

Keywords

Tunnel Junction Orbit Coupling Magnetocrystalline Anisotropy Magnetic Tunnel Junction Ferromagnetic Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

List of Acronyms

AMR

Anisotropic magnetoresistance

CB

Coulomb blockade

DOS

Density of states

DW

Domain wall

FMR

Ferromagnetic resonance

GGA

Generalized gradient approximations

GMR

Giant magnetoresistance

LSMR

Linear spin-Hall magnetoresistance

LT-MBE

Low-temperature molecular-beam epitaxy

MRAM

Magnetic random access memory

OSOT

Optical spin–orbit torque

OSTT

Optical spin–transfer torque

SET

Single-electron transistor

SHE

Spin-Hall effect

SOT

Spin–orbit torque

SQUID

Superconducting quantum interference device

STM

Scanning tunneling microscopy

STT

Spin–transfer torque

TAMR

Tunneling anisotropic magnetoresistance

TBA

Tight-binding approximation

TMR

Tunneling magnetoresistance

WB

Walker breakdown

Notes

Acknowledgments

This review is based on numerous helpful discussions with our colleagues. In particular we acknowledge discussions with Richard Campion, Tomasz Dietl, Kevin Edmonds, Andrew Ferguson,Tom Foxon, Bryan Gallagher, Allan MacDonald, Jan Mašek, Petr Němec, Vít Novák, Hideo Ohno, Kamil Olejník, Andrev Rushforth, Jairo Sinova, Karel Výborný, Dieter Weiss, Jorg Wunderlich, and Jan Zemen. We also acknowledge support from the ERC Advanced Grant No. 268066, from the Ministry of Education of the Czech Republic Grant No. LM2011026, and from the Czech Science Foundation Grant No. 14-37427G

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© Springer Science+Business Media Dordrecht 2015

Authors and Affiliations

  1. 1.Institute of Physics ASCR, v.v.i.Praha 6Czech Republic
  2. 2.School of Physics and AstronomyUniversity of NottinghamNottinghamUK

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