Magnetic Tunnel Junctions and Their Applications in Non-volatile Circuits

  • Juan G. AlzateEmail author
  • Pedram Khalili AmiriEmail author
  • Kang L. WangEmail author
Reference work entry


Magnetic tunnel junctions (MTJs) have become the basic building blocks of spintronic nonvolatile circuits due to their large tunneling magnetoresistance (TMR) values for readout and the possibility to electrically write information into the devices. This chapter focuses on evaluating the performance, challenges, and design parameters of MTJ devices for nonvolatile circuits. The reading, writing, and storing functions are evaluated under the light of the different requirements of nonvolatile circuit applications and utilizing new developments in the design and realization of state-of-the-art MTJs. Finally, examples of the role of MTJs in CMOS-based and beyond-CMOS computing are presented.


Spin Wave Free Layer Magnetic Tunnel Junction Perpendicular Anisotropy Majority Gate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

List of Abbreviations


Antiparallel state of the MTJ


Back end of the line


Complementary metal-oxide-semiconductor




Magnetic random access memory


Magnetic tunnel junction


Nonvolatile memory


Parallel state of the MTJ


Spin Hall effect


Spin-orbit torque


Spin-transfer torque


Tunneling magnetoresistance


Voltage-controlled magnetic anisotropy


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© Springer Science+Business Media Dordrecht 2016

Authors and Affiliations

  1. 1.Department of Electrical EngineeringUniversity of CaliforniaLos AngelesUSA

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