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MRAM Fundamentals and Devices

  • Hiroaki YodaEmail author
Reference work entry

Abstract

This chapter covers the entire gamut of MRAM, from the fundamental physics of magnetism, magnetic materials used in MTJ elements, history of MRAM developments, and innovations which were keys to MRAM, to important designing points, MRAM scalability, and expected future evolutions of MRAM.

The chapter is expected to help engineers who are not familiar with MRAM to learn MRAM and develop a deeper understanding of its concepts, so that they can be more creative in their work. The chapter will also help researchers to make innovations for scalability and for memory hierarchy evolution with MRAM.

Keywords

Magnetic Layer Memory Hierarchy Threshold Curve Phase Change Memory Design Node 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

List of Abbreviations

AMR

Anisotropic Magneto Resistance

CIMR

Current Induced Magnetization Reversal

ECC

Error Correction Code

FeRAM

Ferroelectric RAM

GMR

Giant MagnetoResistance

MRAM

Magnetoresistive Random Access Memory

MTJ

Magnetic Tunnel Junction

NOC

Normally-Off Computing

PRAM

Phase change RAM, also called PCRAM, PCM, or Ovonic Memory

ReRAM

Resistive RAM

Spin-RAM

Alternative term for STT-writing MRAM

TMR

Tunnel MagnetoResistance

Notes

Acknowledgments

I would like to thank all members of the Spin-RAM working group of the NEDO Spintronics Nonvolatile Devices project (2006–2010), which was organized by the collaboration of AIST, Toshiba, Tohoku University, Osaka University, and University of Electro-Communications, for their contributions to the development of Spin-RAM.

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Copyright information

© Springer Science+Business Media Dordrecht 2016

Authors and Affiliations

  1. 1.Toshiba Electronics Korea CorporationSeoulRepublic of Korea

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