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Si Based Magnetic Semiconductors

  • John F. DiTusaEmail author
Reference work entry

Abstract

The efforts over the past decade to identify and characterize magnetic semiconducting systems that would be compatible with present-day silicon technologies are reviewed. Investigations that have explored transition metal doping of the group IV semiconductors silicon and germanium are discussed along with intermetallic compounds such as silicides and germanides that may play the role of a magnetic semiconducting source of polarized electrons. Thin films and nanostructures of these materials have been grown by a number of synthesis techniques, and the resulting structural properties, including the important issue of homogeneity of dopants, are critically surveyed. The resulting magnetic and carrier transport properties are also reviewed.

Keywords

Curie Temperature Magnetic Semiconductor Spin Current Schottky Barrier Height High Curie Temperature 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

List of Abbreviations

AFM

Antiferromagnetic

CVD

Chemical vapor deposition

FC

Field cooled

FM

Ferromagnetic

HM

Helimagnetic

HRTEM

High-resolution transmission electron microscopy

MBE

Molecular beam epitaxy

MFM

Magnetic force microscopy

PLD

Pulsed laser deposition

RDE

Reactive deposition epitaxy

SPE

Solid-phase epitaxy

SQUID

Superconducting quantum interference device

STEM

Scanning transmission electron microscopy

STM

Scanning tunneling microscopy

Tc

Curie temperature

TEM

Transmission electron microscopy

TM

Transition metal

XRD

X-ray diffraction

ZFC

Zero field cooled

α

Amorphous

μB

Bohr magneton

ρ

Resistivity

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Further Reading

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Copyright information

© Springer Science+Business Media Dordrecht 2016

Authors and Affiliations

  1. 1.Department of Physics and AstronomyLouisiana State UniversityBaton RougeUSA

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