Electrical Spin Injection into InGaAs Quantum Dots

  • G. KioseoglouEmail author
  • C. H. Li
  • B. T. Jonker
Reference work entry


The electrical injection of spin-polarized electrons from ferromagnetic Fe contacts into self-assembled InGaAs quantum dots (QDs) incorporated in GaAs/AlGaAs spin light-emitting diode (spin-LED) structures is summarized here. The emissions from the ensemble QDs are efficient and broad in energy due to inhomogeneous broadening (QD size distribution). The circular polarization was measured as functions of current, magnetic field, and temperature. Electrical spin injection at room temperature was achieved, and the spin polarization of the QD emission was found to be remarkably insensitive to temperature. Robust spin polarization was also found in the emission from the InAs wetting layer (WL). At low temperatures, a sharp drop in QD polarization at fields around 5 T is observed, attributed to an efficient magnetic field-induced spin relaxation mechanism involving a two-step process when the dots are occupied by three electron–hole pairs. A modified growth method was also employed to produce low-density and high-uniformity dots to study the spin population of individual shell states. Sequential filling of the s-, p-, d-, and f-shells and the control of their polarization were demonstrated using a spin-polarized current from the Fe contact, and the s-p and p-d intershell exchange energies were determined. These results demonstrate that the spin polarization in InGaAs QDs is robust and can be controlled by a spin-polarized electrical current, an important step toward utilizing QDs in next-generation devices for information processing.


Quantum Well Circular Polarization Orbit Interaction Spin Lifetime Electrical Injection 
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List of Abbreviations


2-dimensional electron gas






Full width at half max


Harmonic oscillator


Left circularly polarized


Light-emitting diode


Molecular beam epitaxy






Quantum dot


Quantum well


Right circularly polarized


Superconducting quantum interference device


Transmission electron microscopy


Wetting layer


Carrier recombination lifetime


Spin lifetime



The authors gratefully acknowledge the support from core basic research programs at the Naval Research Laboratory and the Office of Naval Research. They also wish to acknowledge the group of Prof. A. Petrou at the State University of New York at Buffalo, and M. Korkusinski and P. Hawrylak at the Quantum Theory Group, National Research Council of Canada, who have contributed significantly to the work presented here.


  1. 1.
    DiVincenzo DP, Bacon D, Kempe J, Burkard G, Whaley KB (2000) Universal quantum computation with the exchange interaction. Nature 408:339CrossRefADSGoogle Scholar
  2. 2.
    Kroutvar M, Ducommun Y, Heiss D, Bichler M, Schuh D, Abstreiter G, Finley JJ (2004) Optically programmable electron spin memory using semiconductor quantum dots. Nature 432:81CrossRefADSGoogle Scholar
  3. 3.
    Wolf SA, Awschalom DD, Buhrman RA, Daughton JM, von Molnár S, Roukes ML, Chtchelkanova AY, Treger DM (2001) Spintronics: a spin-based electronics vision for the future. Science 294:1488CrossRefADSGoogle Scholar
  4. 4.
    Holub MA, Shin J, Saha D, Bhattacharya P (2007) Electrical spin injection and threshold reduction in a semiconductor laser. Phys Rev Lett 98:146603CrossRefADSGoogle Scholar
  5. 5.
    Kato Y, Myers RC, Gossard AC, Awschalom DD (2004) Coherent spin manipulation without magnetic fields in strained semiconductors. Nature 427:50CrossRefADSGoogle Scholar
  6. 6.
    Hawrylak P, Korkusinski M (2002) Electronic and optical properties of self-assembled quantum dots. In: Michler P (ed) Single quantum dots: fundamentals, applications, and new concepts, vol 90, Topics in applied physics. Springer, BerlinGoogle Scholar
  7. 7.
    He L, Zunger A (2006) Multiple charging of InAs/GaAs quantum dots by electrons or holes: addition energies and ground-state configurations. Phys Rev Lett 73:115324Google Scholar
  8. 8.
    Gerardot BD (2008) Optical pumping of a single hole spin in a quantum dot. Nature 451:441CrossRefADSGoogle Scholar
  9. 9.
    Gammon D, Snow ES, Shanabrook BV, Katzer DS, Park D (1996) Homogeneous linewidths in the optical spectrum of a single gallium arsenide quantum dot. Science 273:87CrossRefADSGoogle Scholar
  10. 10.
    Khaetskii AV, Nazarov YV (2000) Spin relaxation in semiconductor quantum dots. Phys Rev B 61:12639CrossRefADSGoogle Scholar
  11. 11.
    Bayer M, Stern O, Hawrylak P, Fafard S, Forchel A (2000) Hidden symmetries in the energy levels of excitonic ‘artificial atoms’. Nature 405:923CrossRefADSGoogle Scholar
  12. 12.
    Paillard M, Marie X, Renucci P, Amand T, Jbeli A, Gerard JM (2001) Spin relaxation quenching in semiconductor quantum dots. Phys Rev Lett 86:1634CrossRefADSGoogle Scholar
  13. 13.
    Petta JR, Johnson AC, Taylor JM, Laird EA, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC (2005) Coherent manipulation of coupled electron spins in semiconductor quantum dots. Science 309:2180CrossRefADSGoogle Scholar
  14. 14.
    Jonker BT, Park YD, Bennett BR, Cheong HD, Kioseoglou G, Petrou A (2000) Crystal-structure contribution to the solid solubility in transition metal alloys. Phys Rev B 62:8180CrossRefADSGoogle Scholar
  15. 15.
    Fiederling R, Keim M, Reuscher G, Ossau W, Schmidt G, Waag A, Molenkamp LW (1999) Injection and detection of a spin-polarized current in a light-emitting diode. Nature 402:787CrossRefADSGoogle Scholar
  16. 16.
    Ohno Y, Young DK, Beschoten B, Matsukura F, Ohno H, Awschalom DD (1999) Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature 402:790CrossRefADSGoogle Scholar
  17. 17.
    Hanbicki AT, Jonker BT, Itskos G, Kioseoglou G, Petrou A (2002) Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor. Appl Phys Lett 80:1240CrossRefADSGoogle Scholar
  18. 18.
    Hanbicki AT, van ’t Erve OMJ, Magno R, Kioseoglou G, Li CH, Jonker BT, Itskos G, Mallory R, Yasar M, Petrou A (2003) Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier. Appl Phys Lett 82:4092CrossRefADSGoogle Scholar
  19. 19.
    Adelmann C, Lou X, Strand J, Palmstrom CJ, Crowell PA (2005) Spin injection and relaxation in ferromagnet-semiconductor heterostructures. Phys Rev B 71:121301CrossRefADSGoogle Scholar
  20. 20.
    Chye Y, White ME, Johnston-Halperin E, Gerardot BD, Awschalom DD, Petroff PM (2002) Spin injection from (Ga,Mn)As into InAs quantum dots. Phys Rev B 66:201301(R)CrossRefADSGoogle Scholar
  21. 21.
    Chakrabarti S, Holub MA, Bhattacharya P, Mishima TD, Santos MB, Johnson MB, Blom DA (2005) Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner. Nano Lett 5:209CrossRefADSGoogle Scholar
  22. 22.
    Löffler W, Tröndle D, Fallert J, Kalt H, Litvinov D, Gerthsen D, Lupaca-Schomber J, Passow T, Daniel B, Kvietkova J, Grün M, Klingshirn C, Hetterich M (2006) Electrical spin injection from ZnMnSe into InGaAs quantum wells and quantum dots. Appl Phys Lett 88:062105CrossRefADSGoogle Scholar
  23. 23.
    Ghali M, Arians R, Kümmell T, Bacher G, Wenisch J, Mahapatra S, Brunner K (2007) Spin injection into a single self-assembled quantum dot in a p-i-n II-VI/III-V structure. Appl Phys Lett 90:093110CrossRefADSGoogle Scholar
  24. 24.
    Seufert J, Bacher G, Schomig H, Forchel A, Hansen L, Schmidt G, Molenkamp LW (2004) Spin injection into a single self-assembled quantum dot. Phys Rev B 69:035311CrossRefADSGoogle Scholar
  25. 25.
    Itskos G, Harbord E, Clowes SK, Clarke E, Cohen LF, Murray R, Van Dorpe P, Van Roy W (2006) Oblique Hanle measurements of InAs/GaAs quantum dot spin-light emitting diodes. Appl Phys Lett 88:022113CrossRefADSGoogle Scholar
  26. 26.
    Li CH, Kioseoglou G, van ’t Erve OMJ, Ware ME, Gammon D, Stroud RM, Jonker BT, Mallory R, Yasar M, Petrou A (2005) Electrical spin pumping of quantum dots at room temperature. Appl Phys Lett 86:132503CrossRefADSGoogle Scholar
  27. 27.
    Lombez L, Renucci P, Braun PF, Carrere H, Marie X, Amand T, Urbaszek B, Gauffier JL, Gallo P, Camps T, Arnoult A, Fontaine C, Deranlot C, Mattana R, Jaffres H, George JM, Binh PH (2007) Electrical spin injection into p-doped quantum dots through a tunnel barrier. Appl Phys Lett 90:081111CrossRefADSGoogle Scholar
  28. 28.
    Kioseoglou G, Yasar M, Li CH, Korkusinski M, Diaz-Avila M, Hanbicki AT, Hawrylak H, Petrou A, Jonker BT (2008) Intershell exchange and sequential electrically injected spin populations of InAs quantum-dot shell states. Phys Rev Lett 101:227203CrossRefADSGoogle Scholar
  29. 29.
    Ashoori RC (1996) Electrons in artificial atoms. Nature 379:413CrossRefADSGoogle Scholar
  30. 30.
    Folk JA, Potok RM, Marcus CM, Umansky V (2003) A gate-controlled bidirectional spin filter using quantum coherence. Science 299:679CrossRefADSGoogle Scholar
  31. 31.
    Wasilewski ZR, Fafard S, McCaffrey JP (1999) Size and shape engineering of vertically stacked self-assembled quantum dots. J Cryst Growth 201/202:1131CrossRefADSGoogle Scholar
  32. 32.
    Meier F, Zakharchenya BP (1984) Optical orientation. North-Holland, AmsterdamGoogle Scholar
  33. 33.
    Russ AH, Schweidenback L, Yasar M, Li CH, Hanbicki AT, Korkusinski M, Kioseoglou G, Jonker BT, Petrou A (2011) Spin-polarized multiexcitons in quantum dots in the presence of spin-orbit interaction. Phys Rev B 84:045312CrossRefADSGoogle Scholar
  34. 34.
    Pryor CE, Flatté ME (2003) Accuracy of circular polarization as a measure of spin polarization in quantum dot qubits. Phys Rev Lett 91:257901CrossRefADSGoogle Scholar
  35. 35.
    Sanguinetti S, Henini M, Grassi Alessi M, Capizzi M, Frigeri P, Franchi S (1999) Heavy-hole and light-hole oscillations in the coherent emission from quantum wells: evidence for exciton-exciton correlations. Phys Rev B 60:8267CrossRefADSGoogle Scholar
  36. 36.
    Malinowski A, Britton RS, Grevatt T, Harley RT, Ritchie DA, Simmons MY (2000) Spin relaxation in GaAs/AlxGa1-xAs quantum wells. Phys Rev B 62:13034CrossRefADSGoogle Scholar
  37. 37.
    Sek G, Ryczko K, Motyka M, Andrzejewski J, Wysocka K, Misiewicz J, Li LH, Fiore A, Patriarche G (2007) Wetting layer states of InAs/GaAs self-assembled quantum dot structures: effect of intermixing and capping layer. J Appl Phys 101:063539CrossRefADSGoogle Scholar
  38. 38.
    Offermans P, Koenraad PM, Nötzel R, Wolter JH, Pierz K (2005) Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy. Appl Phys Lett 87:111903CrossRefADSGoogle Scholar
  39. 39.
    Rosenaur A, Gerthsen D, Van Dyck D, Arzberger M, Böhm G, Abstreiter G (2001) Quantification of segregation and mass transport in InxGa1-xAs/GaAs Stranski-Krastanow layers. Phys Rev B 64:245334CrossRefADSGoogle Scholar
  40. 40.
    Li CH, Kioseoglou G, Hanbicki AT, Goswami R, Hellberg CS, Jonker BT, Yasar M, Petrou A (2007) Electrical spin injection into the InAs/GaAs wetting layer. Appl Phys Lett 91:262504CrossRefADSGoogle Scholar
  41. 41.
    Hickey MC, Damsgaard CD, Farrer I, Homes SN, Husmann A, Hansen JB, Jacobsen CS, Ritchie DA, Lee RF, Jones GAC, Pepper M (2005) Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well. Appl Phys Lett 86:252106CrossRefADSGoogle Scholar
  42. 42.
    Raymond S, Studenikin S, Sachrajda A, Wasilewski Z, Cheng SJ, Sheng W, Hawrylak P, Babinski A, Potemski M, Ortner G, Bayer M (2004) Excitonic energy shell structure of self-assembled InGaAs/GaAs quantum dots. Phys Rev Lett 92:187402CrossRefADSGoogle Scholar
  43. 43.
    Narvez GA, Bester G, Zunger A (2006) Carrier relaxation mechanisms in self-assembled (In, Ga)As/GaAs quantum dots: efficient P → S Auger relaxation of electrons. Phys Rev B 74:075403CrossRefADSGoogle Scholar
  44. 44.
    Oestreich M, Hallstein S, Heberle AP, Eberl K, Bauser E, Rühle WW (1996) Temperature and density dependence of the electron Landé g factor in semiconductors. Phys Rev B 53:7911CrossRefADSGoogle Scholar
  45. 45.
    Hawrylak P (1999) Excitonic artificial atoms: engineering optical properties of quantum dots. Phys Rev B 60:5597CrossRefADSGoogle Scholar
  46. 46.
    Korkusinski M, Hawrylak P (2008) Optical signatures of spin polarization of carriers in quantum dots. Phys Rev Lett 101:027205CrossRefADSGoogle Scholar
  47. 47.
    de Andrada EA, La Rocca GC, Bassani F (1997) Spin-orbit splitting of electronic states in semiconductor asymmetric quantum wells. Phys Rev B 55:16293CrossRefADSGoogle Scholar
  48. 48.
    Florescu M, Hawrylak P (2006) Spin relaxation in lateral quantum dots: effects of spin-orbit interaction. Phys Rev B 73:045304CrossRefADSGoogle Scholar
  49. 49.
    Bulaev DV, Loss D (2005) Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling. Phys Rev B 71:205324CrossRefADSGoogle Scholar
  50. 50.
    Stano P, Fabian J (2006) Orbital and spin relaxation in single and coupled quantum dots. Phys Rev B 74:045320CrossRefADSGoogle Scholar
  51. 51.
    Nakaoka T, Saito T, Tatebayashi J, Hirose S, Usuki T, Yokoyama N, Arakawa Y (2005) Tuning of g-factor in self-assembled In(Ga)As quantum dots through strain engineering. Phys Rev B 71:205301CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2016

Authors and Affiliations

  1. 1.Naval Research LaboratoryWashingtonUSA
  2. 2.Department of Materials Science and TechnologyUniversity of CreteHeraklion CreteGreece

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