Definition
Atomic layer deposition is a method of thin film growth related to chemical vapor deposition whereby two or more vapor-phase precursor chemicals are individually and sequentially introduced to a substrate surface via discrete precursor pulses that are separated by purge steps. Each precursor pulse must yield saturative, self-limiting growth of a monolayer or sub-monolayer of the desired material if an ALD mechanism is operant. The resultant film exhibits excellent thickness uniformity and conformality, even on highly complex and demanding nanoscale substrate features, with the process affording an excellent degree of thickness control at the sub-nanometer level.
Introduction
Atomic layer deposition (ALD) is a technique for the deposition of thin films of solid-state or polymeric materials onto solid substrates from vapor-phase...
Keywords
- Atomic Layer Deposition
- Dynamic Random Access Memory
- Atomic Layer Deposition Process
- Atomic Layer Deposition Cycle
- Atomic Layer Deposition Film
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References
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Dezelah, C.L. (2015). Atomic Layer Deposition. In: Bhushan, B. (eds) Encyclopedia of Nanotechnology. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6178-0_372-2
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DOI: https://doi.org/10.1007/978-94-007-6178-0_372-2
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