Self-Formation of Semiconductor Quantum Dots

  • Koichi Yamaguchi
Reference work entry


We reviewed the self-formation control of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. Uniform InAs/GaAs QDs were demonstrated by self-size-limiting effect, the optimized capping growth, and the closely stacked growth using the nanoholes. High-density InAs QDs were achieved by Sb-mediated growth. In addition, an intermittent growth method was presented for ultralow density InAs QDs. Furthermore, the vertical and in-plane arrangements of InAs/GaAs QDs were attempted by using the strain-controlled underlying layers. One-dimensional QD chains were spontaneously formed along the [1–10] direction on the GaAs/InGaAs/GaAs(001) buffer layers. Two-dimensional arrangement of InAs QDs was demonstrated by using GaAsSb/GaAs(001) buffer layers.


RHEED Pattern GaAs Buffer Layer Show Atomic Force Microscopy Image Quantum Energy Level Growth Mode Transition 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Department of Engineering ScienceThe University of Electro-CommunicationsTokyoJapan

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