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Self-Formation of Semiconductor Quantum Dots

  • Koichi Yamaguchi
Reference work entry

Abstract

We reviewed the self-formation control of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. Uniform InAs/GaAs QDs were demonstrated by self-size-limiting effect, the optimized capping growth, and the closely stacked growth using the nanoholes. High-density InAs QDs were achieved by Sb-mediated growth. In addition, an intermittent growth method was presented for ultralow density InAs QDs. Furthermore, the vertical and in-plane arrangements of InAs/GaAs QDs were attempted by using the strain-controlled underlying layers. One-dimensional QD chains were spontaneously formed along the [1–10] direction on the GaAs/InGaAs/GaAs(001) buffer layers. Two-dimensional arrangement of InAs QDs was demonstrated by using GaAsSb/GaAs(001) buffer layers.

Keywords

RHEED Pattern GaAs Buffer Layer Show Atomic Force Microscopy Image Quantum Energy Level Growth Mode Transition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Department of Engineering ScienceThe University of Electro-CommunicationsTokyoJapan

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