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Plasma Etching

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Encyclopedia of Microfluidics and Nanofluidics

Synonyms

Advanced Si Etching (ASE); DRIE; High aspect ratio Si etching; ICP etching; Plasma etching

Definition

The plasma etching is the removal process of materials performed by plasma, which is involved in the physical, chemical, and mixed etching mechanisms. The ion-enhanced chemical etching, i.e., reactive radical-dominated etching process with ion assistance is used in microelectronics and MEMS fabrication. The ICP (inductively coupled plasma) etching is considered as the etching process using a high-density plasma generated by the inductive coupling of RF power through an antenna, which is widely used in Si micromachining for high aspect ratio, through Si and deep microstructure fabrication. DRIE(deep reactive ion etching) is another term for ICP etching due to the deep or high aspect ratio microstructure fabricated by RIE principles, which is also called high aspect ratio Si etching or Advanced Silicon Etching (ASE TM, trademark of this technology by STS company which was...

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References

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Author information

Authors and Affiliations

  1. Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, No.1, University Road, Tainan, 701, Taiwan (R.O.C)

    Chen-Kuei Chung

Authors
  1. Chen-Kuei Chung
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Corresponding author

Correspondence to Chen-Kuei Chung .

Editor information

Editors and Affiliations

  1. VU Station B 351592, Vanderbilt University Dept. Mechanical Engineering, Nashville, Tennessee, USA

    Dongqing Li

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Chung, CK. (2014). Plasma Etching. In: Li, D. (eds) Encyclopedia of Microfluidics and Nanofluidics. Springer, Boston, MA. https://doi.org/10.1007/978-3-642-27758-0_1251-5

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  • DOI: https://doi.org/10.1007/978-3-642-27758-0_1251-5

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  • Online ISBN: 978-3-642-27758-0

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